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SUD40N08-16
N-Channel 80-V (D-S) 175C MOSFET
SUD40N08-16
Vishay Siliconix
VISHAY
New Product
N-Channel 80-V (D-S) 175°C MOSFET
PRODUCT SUMMARY wj!tt'J?
o© 'iN' (5)
VDs(V) rosmusz) ID (A) 16 saCssx'ssl fig
80 0.016@VGs=10V 40 A NW“ ott' tts
w Q 05%
ttl?, n“
'est'''
TO-252
TT]- . Gd
Drain Connected to Tab
Top Vew
Order Number: s
SUD40N08-16
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V95 80
Gate-Source Voltage VGS $20
Tc = 25''C 40
Continuous Drain Current (T: = 175°C)b ID
TC = 125°C 30
Pulsed Drain Current IBM 60 A
Continuous Source Current (Diode Conduction) ls 40
Avalanche Current IAR 40
Repetitive Avalanche Energy (Duty Cycle 5 1%) L = 0.1 mH EAR 80 mJ
Tc = 25''C 100b
Maximum Power Dissipation PD W
TA = 25°C 3a
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
Junction-to-Ambien?' R
Steady State WA 40 50 ''CA/V
Junction-to-Case Rch 1.2 1.5
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71323 www.vishay.com
S-02197-Rev. A, 02-Oct-00
SUD40N08 16 VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 80
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 2.0 4.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=64V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 64 V, VGS = 0 V, T: = 125°C 50 WA
VDS=64V,VGS=0V,TJ=175°C 250
On-State Drain Currentb IBM) Vros = 5 V, VGs = 10 V 60 A
VGS= 10 V, ID=4OA 0.013 0.016
Drain-Source On-State Resistanceb rDS(on) Ves = 10 V, ID = 40 A, TJ = 125°C 0.027 Q
VGS=1OV,ID=4OA,TJ=17SOC 0.037
Forward Transconductanceb gfs VDs = 15 V, ID = 40 A 45 S
Dynamica
Input Capacitance Ciss 1960
Output Capacitance Coss I/ss = 0 V, Vos = 25 V, F = 1 MHz 370 pF
Reverse Transfer Capacitance Crss 200
Total Gate Chargec % 42 60
Gate-Source Chargec Qgs VDs = 40 V, VGS = 10 V, ID = 40 A 7 nC
Gate-Drain Chargec di 13
Turn-On Delay Time0 td(on) 12 20
Rise Timec tr VDD = 40 V, RL = 1.0 Q 52 80 ns
Turn-Off Delay Timec tdmm 'D E 40 A, VGEN = 10 V, Rs = 2.5 Q 25 38
Fall Tlmec tf 10 15
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 60
Diode Forward Voltagep VSD IF = 40 A, VGs = O V 1.0 1.5
Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 Alps 45 70 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 us. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71323
2 S-02197-Rev, A, 02-Oct-00
VISHAY
SUD40N08-16
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
100 l I
s,e''"'U, =10thru 7V
Tz,' 60 6 v A
tz -----
Es 40 w,.,,,----"""
3, 4 v 5 V
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -551
A 60 25°C -
.5 o,,,,--"'""" 125°C
(i 40 / sr''''"
2 ve'''''''''
0 20 40 60 80 100
ID - Drain Current (A)
Capacitance
[li-s 2000 Ci
'5 1500
I 1000
500 was, Coss
O 20 40 60 80
VDS - Drain-to-Source Voltage (V)
| D — Drain Current (A)
I’DS(on)— On-Resistance ( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
TC = 125°C /
20 25°C /l
E7 4500
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 10 V
0 20 40 60 80 100
ID - Drain Current(A)
Gate Charge
VDS = 10 V
16 - ID = 40 A f
0 15 30 45 60 75
Qg - Total Gate Charge (nC)
Document Number: 71323
S-02197-Rev. A, 02-Oct-00
www.vishay.com
SUD40N08-16
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4 I _ I 100
VGS = 10 V
2.0 - ID = 40 A
[i', / iiit" 10 T: = 150°C
0.) 1 6 -
8 A 'pr''" a
m RD b-
"a' g / 's
'5 = ' o
a) N 1.2 I u) 1
u; E "w''''' F?
0 Z / o
V / cn
' 0.8 7 I
3 / w 0.1
0.0 0.01
-50 -25 0 25 5O 75 100 125 150 175 0 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
50 1000
's, 100
ig" "ss,.
"ie,' 30 ,
o "sss,
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Limited by rDS(on) 10 MS
100 us
"100 ms
TC = 25''C 1 s, dc
Single Pulse
| D — Drain Current (A)
0.1 1 10 100
Vros - Drain-tty-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Thermal Impedance
Single Pulse
Nomalized Effective Transient
10-4 1o-3 1o-2
IO-I 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71323
S-02197-Rev, A, 02-Oct-00
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