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SUD40N04-10A
N-Channel 40-V (D-S) 175C MOSFET, Logic Level
VISHAY
SUD40N04-10A
New Product
Vishay Siliconix
N-Channel 40-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (AP
0.010@VGs=10 v 40
40 0.014 @ Vss = 4.5 v 40
TO-252
Drain Connected to Tab
Top Mew
Order Number:
SUD40N04-10A
1''il tf firJ's"ss'i's
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 40
Gate-Source Voltage VGs l 20
TC = 25''C 40a
Continuous Drain Current (TJ = 175°C) ID
Tc = 100''C 40a
Pulsed Drain Current IBM 100
Avalanche Current IAR 30
Repetitive Avalanche Energyb L = 0.1 mH EAR 45 mJ
Power Dissipation TC = 25''C PD 71C W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec. 15 18
Junction-to-Ambient) R
Steady State WA 40 50 00M]
Junction-to-Case Rch 1.75 2.1
Notes:
Package limited.
Duty cycle 2 1%.
See SOA curve for voltage derating.
Surface mounted on 1" FR4 board.
9-9" 579’
Document Number: 71420
S-03269-Rev. A, 26-Mar-01
www.vishay.com
SUD40N04-10A
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS IT., = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 40
Gate Threshold Voltage Vegan) VDs = VGs. IDS = 250 WA 1 3 V
Gate-Body Leakage less Vos = 0 V, VGS = $20 V ck 100 nA
Vas-- 32V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 32 V, VGs = 0 V, TJ = 125°C 50 HA
fs-- 32V,VGS=0V,TJ=175°C 150
On-State Drain Currenta low") Vos = 5 V, VGS = 10 V 40 A
VGS=1OV, ID: 40A 0.0075 0.010
VGS=10V,ID=4OA,TJ=125°C 0.012 0.016
Veg: 10 V, ID: 40 A, TJ = 175°C 0.015 0.020
Drain-Source On-State Resistancea rDs(0n) VGS = 4.5 V, ID = 10 A 0.011 0.014 Q
VGS=4.5 V, ID: 10A, TJ = 125°C 0.018 0.022
VGS = 4.5 V, ID = 10 A, T: = 175°C 0.022 0.028
Forward Transconductancea gts VDS = 15 V, ID = 40 A 20 40 S
Dynamicb
Input Capacitance Ciss 1700
Output Capacitance Cass VGS = 0 V, VDS = 25 V, f= 1 MHz 370 pF
Reversen Transfer Capacitance Crss 145
Total Gate Charges Q9 35
Gate-Source Chargec Q95 I/os = 20 V, VGS = 10 V, ID = 40 A 6 n0
Gate-Drain ChargeC di 8
Turn-On Delay TimeC tum") 14 30
Rise Timec tr VDD = 20 V, RL = 0.5 Q 7.5 15 ns
Turn-Off Delay Timec timgt) ID = 40 A, VGEN = 10 V, Rs = 2.5 Q 30 60
Fall Time0 If 14 3O
Source-Drain Ciode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 40
Pulsed Current ISM 100 A
Forward Voltagea VSD IF = 40 A, VGS = O V 1.0 1.50 V
Reverse Recovery Time trr IF = 40 A, dildt = 100 Alps 30 60 ns
Notes:
a. Pulsetest; pulse width s 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
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Document Number: 71420
S-03269-Rev, A, 26-Mar-01
VISHAY
New Product
SUD40N04-10A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
120 1 l
VGS=10thru 6V
"it'', 90
2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
Transconductance
TC = -55c'C
iii. 60 25 C -
o5, 125°C
g 40 /
20 4O 60 80 100
VGS - Gate-to-Source Voltage (V)
Capacitance
3 2000 Ciss
8 'ss-..,.,.....,
‘6 1500
I 1000
Ns. Cass
500 'ss,.
0 Crss
O 8 16 24 32 40
V03 - Drain-to-Source Voltage (V)
| D — Drain Current (A)
rDs(on) — On—Resistance ( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
Tc = 125°C
25°C /
I -55oC
o 1 2 3 4 5 6
N/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
O 20 4O 60 80 100
ID - Drain Current (A)
Gate Charge
16 Vss=20V /
- b--40A /
12 ow'''''
8 o,,,w''''''''"
O 10 20 3O 40 50 60
Q9 - Total Gate Charge (nC)
Document Number: 71420
S-03269-Rev. A, 26-Mar-01
www.vishay.com
SUD40N04-10A
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
0n-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 _ 100
VGS = 10 V
b = 30 A
E G" 1.5 / te
Ei S "-'" 5
“F g ",--"' 'll
c? g 1.0 / Ji
E wrr''' <0
E3 0.5
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current Safe 0 eratin Area
vs. Case Temperature p g
50 1000
"N, 100
"ig' N. Ct
if 30 "ss E»
'r, 'r,
O O 10
AS \ '
ta- 20 o
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Ambient Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
"if',' g
Ite Tu 0.]
IO-A 10-3 10-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com DocumentNumber: 71420
S-03269-Rev, A, 26-Mar-01
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