SUD40N02-08 ,N-Channel 20-V (D-S) 175C MOSFETS-03182—Rev. A, 05-Mar-01 1SUD40N02-08New ProductVishay Siliconix ..
SUD40N03-18P ,N-Channel 30-V (D-S) MOSFETSUD40N03-18PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUD40N02-08
N-Channel 20-V (D-S) 175C MOSFET
VISHAY
SUD40N02-08
New Product Vishay Siliconix
N-Channel 20-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q)
0.0085 @ sz = 4.5 v
ID AP CG . B gsN (B
( ) tttf,,,'))?'''' l _'iiittrf
0.014 © l/ss = 2.5 v
TO-252
l l Drain Connected to Tab
Top 1hew
Order Number:
SUD40N02-08
40 'tsais'''' iii/tie/rc''''''
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS 21:12
Tc = 25°C 40
Continuous Drain Currenta ID
TC = 100°C 40
Pulsed Drain Current IBM 100
Continuous Source Current (Diode Conduction)a ls 40
Tc = 25''C 71
Maximum Power Dissipation Pro W
TA = 25°C 8.3b, 0
Operating Junction and Storage Temperature Range To, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec. 15 18
Maximum Junction-to-Ambientb RthJA
Steady State 40 50 "'C/W
Maximum Junction-to-Case RthJC 1.75 2.1
a. Package Limited
b. Surface Mounted on I" x I" FR4 Board
c. t s 10 sec
Document Number: 71422
S-03182-Rev. A, 05-Mar-01
www.vishay.com
SUD40N02-08 “3%
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 20
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 0.6
Gate-Body Leakage less Vos = 0 V, VGS = i 12 V ch 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=20V.VGS=0V,TJ=125°C 50
On-State Drain Currentb IBM) VDS = 5 V, VGs = 4.5 V 40 A
VGS = 4.5 V, b = 20 A 0.0068 0.0085
Drain-Source On-State Resistanceb rDs(on) VGs = 4.5 V '0 = 20 A, TJ = 125°C 0.0104 0.013 Q
VGs--2.5 V, ID=20A 0.011 0.014
Forward Transconductanceb gfs VDS = 5 V, ID = 40 A 20 S
Dynamica
Input Capacitance Ciss 2660
Output Capacitance Coss VGs = 0 V, VDs = 20 V, f= 1 MHz 730 pF
Reverse Transfer Capacitance Crss 375
Total Gate Charges % 26 35
Gate-Source Chargec Qgs VDS = 10 V, VGS = 4.5 V, ID = 40 A 5 n0
Gate-Drain Chargec di 7
Turn-On Delay Timec tum") 20 35
Rise Timec tr VDD = 10 V, RL = 0.25 Q 120 190 ns
Turn-Off Delay TimeC timgt) ID _ 40 A, VGEN = 4.5 V, Re = 2.5 Q 45 70
Fall Timec If 20 35
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 100
Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5
Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 Alps 35 70 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71422
2 S-03182-Rev, A, 05-Mar-01
VISHAY
SUD40N02-08
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
100 _ 100 I
VGS = 4.5 thru 3 V '/
8O 80 I
Cir" ii.:] 'f/
it' 60 2.5 v it' 60 V
g 40 s 40
r', 2 V r', Tc = 125°C
- 20 l - 20 1
25''C y'"
1 0.5V "ss. -55 C
o 1 0 _ J 1 1
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V) N/ss - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
120 0.020
TC = -551
f G 0.015
g 80 / 25°C ii"
g / g I/ss = 2.5 v
a 60 / 125 C - J11 0.010 ,1
g / t VGS = 4.5 v
g w,,''" I
- "is,'
_,l, if 0.005
C” 20 L
0 0.000
0 20 40 60 80 100 0 20 40 60 80 100
Vss-Gate-to-Source Voltage (V) In - Drain Current (A)
Capacitance Gate Charge
4500 12 /'"
V = 10 v
3600 E (f--s 40 A o,,/'''
A 8, 9 F
U15. Ciss Q, ,,,,/''
V A-..-, f?
, 2700 a,
'ti g 6
o 1800 li
I "ss Ta
Q C Coss L? 3 "
900 rss 8 /
0 4 8 12 16 20 0 10 20 30 40 50 60 70
Vos - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Document Number: 71422
S-03182-Rev. A, 05-Mar-01
www.vishay.com
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 4.5 V
ID = 20 A ,.,w''''
8 / tt., T J = 150°C
C A " E
Ill,'. B 1 2 I m
- . " t
8 (il / 8
me g w,,-''''' 8 10
0 3°, 0 8 / 't
I - <0
lic" / l
ih" In
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current Safe 0 eratin Area
vs. Case Temperature p g
50 200
Ct ii:.]
5 30 A 5
E E 10
a 20 5
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature (°C) Vros - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Thermal Impedance
Normalized Effective Transient
1o-4 1o-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71422
4 S-03182-Rev, A, 05-Mar-01
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