SUD30N03-30 ,N-Channel Enhancement-Mode TransSUD30N03-30Vishay SiliconixN-Channel 30-V (D-S), 175C MOSFET
SUD30N03-30
N-Channel Enhancement-Mode Trans
SUD30N03-30
VISHAY
Vishay Siliconix
N-Channel 30-V (D-S), 175°C MOSFET
PRODUCT SUMMARY $3"
CO W" (5)
VDs (V) rDS(on) (C2) ID (A) "t 6 "icsst' '
0.030@Vss=10V 21:30 l . ssN ,
30 mm © s'ts
0.045 @ VGS = 4.5 V d: 25 ett 't
T0-252
T'l]- G o_|
Drain Connected to Tab
Top View
Order Number: s
SUD30N03-30
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30 V
Gate-Source Voltage VGS i 20
Continuous Drain Current TC = 25°C I i 30
(TJ=175°C) TC=100°C D i21 A
Pulsed Drain Current IDM $40
Continuous Source Current (Diode Conduction) Is 30
Tc = 25°C 50
Maximum Power Dissipation PD W
TA = 25°C 3a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient thJA 50
''C/1/V
Maximum Junction-to-Case Rch 3.0
a. Surface Mounted on 4" x 4" FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70268
S-57253-Reu D, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUD30N03-30
. . . . VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = O V, ID = 250 “A 30 V
Gate Threshold Voltage VGS(th) VDs = VGS, ID = 250 WA 1.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDs=30V,VGs=0V 1
Zero Gate Voltage Drain Current Iross VDs = 30 V, VGS = 0 V, To = 125°C 50 WA
VDS=3ov,vGS=0\/,TJ=175°C 150
On-State Drain Currentb 'D(on) Vos = 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 15 A 0.020 0.030
Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, b = 15 A, T: = 125°C 0.033 0.050 Q
VGS = 10 V, ID = 15 A, To =175°C 0.036 0.054
VGS = 4.5 V, lo = 12.5 A 0.030 0.045
Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 10 22 S
Dynamica
Input Capacitance Ciss 1170
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 320 pF
Reverse Transfer Capacitance Crss 60
Total Gate ChargeC Q9 18 35
Gate-Source ChargeC Qgs Vos = 15 V, N/ss = 10 V, b = 30 A 5.5 nC
Gate-Drain Chargec di 2
Turn-On Delay Timec tam) 10 20
Rise Timec tr VDD =15 V, RL = 0.5 g 10 20 ns
Turn-Off Delay Timec td(off) ID E 30 A, VGEN = 10 V, Rs = 7.5 Q 25 40
Fall Timec t, 15 30
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 40
Diode Forward Voltageb VSD IF = 30 A, VGS = 0 V 1.1 1.5
Source-Drain Reverse Recovery Time trr IF = 30 A, dildt = 100 Alps 50 100 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width S 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70268
2-2 S-57253-Rev. D, 24-Feb-98
VISHAY
SUD30N03-30
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
40 I I
Kas-- 10, 9, 8, 7, 6, 5V
5?, //
5 f 4 v
I' 16 r
0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
Transconductance
Tc = -55''C
24 / 25cc -
2 tpl"--
ii, 18 I 125°C -
tO 12 l
0 8 16 24 32 40
ID - Drain Current (A)
Capacitance
p, Coss
6' 600 "N
o "ss-ss..,.,.
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
I D — Drain Current
rDS(on) — On-Resistance (
Ves — Gate-to-Source Voltage (V)
Transfer Characteristics
8 Tc = 150°C
's, 25°C
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06 I
(h05 /
0.04 VGS = 4.5 I...,..,,,,,,-''
0.03 _-....--
VGS = 10 V
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
10 p,,/''"
VDS = 15 v
8 - ID = 30 A ,,,,,,/'''
4 /''" sp'''
O 3 6 9 12 15 18
Q9 - Total Gate Charge (nC)
Document Number: 70268
S-57253-Reu D, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUD30N03-30
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1.8 100
VGS = 10 v /
ID = 15 A 1
Cl " A
8 1.4 -
c A " g
m T7 "
.2 3 ',,,,p''''''' (t
a, m 1.2 1 10
n: E w
é a " E
o g (g
I 1.0 I
if w,,,.'''''' -
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature CC) VSD - Source-to-Drain Voltage(V)
THERMAL RATINGS
Maximum Drain Current vs. CaseTemperature Safe Operating Area
35 200
100 Llnllted
i "ss Ci..".
Ti' 21 x it' 10
.E "s, E
.0. 14 , ,
o N, E 1
O 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature CC) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
st, 'll
ilr,E, 0.1
10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (sec)
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b4 S-57253-Rev. D, 24-Feb-98
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