SUD25N15-52 ,N-Channel 150V (D-S) 175C MOSFETS-05234—Rev. A, 17-Dec-01 1SUD25N15-52New ProductVishay Siliconix ..
SUD30N03-30 ,N-Channel Enhancement-Mode TransSUD30N03-30Vishay SiliconixN-Channel 30-V (D-S), 175C MOSFET
SUD25N15-52
N-Channel 150V (D-S) 175C MOSFET
"ii=iir
VISHAY
SUD25N15-52
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
O.052@VGS=1OV 25
150 0.060 @ VGS = 6 v 23
TO-252
Drain Connected to Tab
Top Jew
Order Number:
SUD25N15-52
FEATURES
. TrenchFET© Power MOSFET
. 175°C Junction Temperature
. PWM Optimized
APPLICATIONS
. Primary Side Switch
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage VGS $20
Tc = 25''C 25
Continuous Drain Current (T: = 175°C)b ID
Tc = 125°C 14.5
Pulsed Drain Current IBM 50 A
Continuous Source Current (Diode Conduction) ls 25
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle 5 1%) L = 0.1 mH EAR 31 mJ
Tc = 25''C 100b
Maximum Power Dissipation PD W
TA = 25°C 3a
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
J ti -t -A bi ta R
unc lon o m en Steady State thJA 40 50 “CNV
Junction-to-Case (Drain) RthJc 1.3 1.6
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71768 www.vishay.com
S-05234-Rev. A, IT-Dec-OI
SUD25N15-52 VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 150
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 " 2
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=120V,Vss=0V 1
Zero Gate Voltage Drain Current loss VDS = 120 V, VGS = 0 V, To = 125°C 50 WA
VDS=120V,VGS=0V,TJ=175°C 250
On-State Drain Currentb IBM) Vros = 5 V, VGs = 10 V 50 A
VGS = 10 V, ID = 5 A 0.042 0.052
VGs=10V.|D=5A,TJ=125°C 0.109
Drain-Source On-State Resistanceb rDs(on) Q
VGS=10V.ID=5A,TJ=175°C 0.145
VGS = 6 V, b = 5 A 0.047 0.060
Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 40 S
Dynamica
Input Capacitance Ciss 1725
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 216 pF
Reverse Transfer Capacitance Crss 100
Total Gate Charges Q9 33 40
Gate-Source Chargec Qgs VDS = 75 V, Vss = 10 V, ID = 25 A 9 n0
Gate-Drain Chargec di 12
Turn-On Delay Time0 tum”) 15 25
Rise Time tr VDD = 50 V, RL = 3 g 70 100 ns
Turn-Off Delay TimeC timgt) ID _ 25 A, VGEN = 10 V, Re = 2.5 Q 25 40
Fall Timec If 60 40
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 50
Diode Forward Voltageb VSD IF = 25 A, VGS = O V 0.9 1.5
Source-Drain Reverse Recovery Time trr IF = 25 A, di/dt = 100 Afys 95 140 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71768
2 S-05234-Reu. A, 17-Dec-01
"ii=iir
VISHAY
SUD25N15-52
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50 I 50
VGS=1Othru7V 6V
-----""
Cai' 'e''"'"''''''" Ci.:.]
E 30 I E 30
Es 20 E 20 To = 125°C
13 D _ _
IO 5 - 10 \
0 O J J I
O 2 4 6 8 IO 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
60 0.10
Tc = -551 w,--''''""
50 7 25''C g
ww''''''''''"" A 0.08
8 40 l ,.,.---'"'''' o i,;
g / 125 C g 0.06 Ves=6V
To' "G
3 3O -..--. '17) ".----"' ----''''''"
RD -"'""
E / 8 0.04
E 20 " veg = 10 v
s,U2 V
U, 10 a 0.02
0 0.00
0 IO 20 30 40 50 10 20 30 40 50
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
2500 20
V = 75 V
2000 E 16 - IUD: 25 A
fi? Ciss oils.'
8 1500 o 12 I
f2. 5 /
8 1000 (i-'; 8 /
I it' /
500 w 4
Crss C (D
w" oss >
O 30 60 90 120 150 10 20 30 4O 50 60
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71768 www.vishay.com
S-05234-Rev. A, IT-Dec-OI
SU D25N15-52
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
3.0 I _ I
Vss=10V /
2.5- ID=5A f
Source-Drain Diode Forward Voltage
V 2 0 5..t.t
g E' " E
E 93 <3
c? E 1 5 b' 10
O E " JI
L 1 0 A I
.8, " w
8 "ww'''" -
" 0.5 /
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
30 100
25 Limited by rDs(on)
ig" 20 "ss. slit" 10
"i' 's, E
8 15 , 8
I 10 I
Tc = 25''C
5 Single Pulse
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
0.1 1 10 100 1000
Vros - Drain-tty-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle - 0.5
'if',' g
t - 0.1
J.l tt5
.5 E 0.02
o 0.05
a I I I
Single Pulse
10-4 10-3 1o-2 IO-I 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71768
S-05234-Reu. A, 17-Dec-01
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