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SUD19N20-90
N-Channel 200-V (D-S) 175C MOSFET
"ii=iir
VISHAY
SUD19N20-90
New Product
N-Channel 200-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
O.090@VGS=1OV 19
0.105@VGS=6V 17.5
TO-252
Drain Connected to Tab
Top Jew
Order Number:
SUD19N20-90
FEATURES
. TrenchFET© Power MOSFET
. 175°C Junction Temperature
. PWM Optimized
APPLICATIONS
. Primary Side Switch
N-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200
Gate-Source Voltage VGS $20
Tc = 25''C 19
Continuous Drain Current (T: = 175°C)b ID
Tc = 125°C 11
Pulsed Drain Current IBM 40 A
Continuous Source Current (Diode Conduction) ls 19
Avalanche Current IAR 19
Repetitive Avalanche Energy (Duty Cycle 5 1%) L = 0.1 mH EAR 18 mJ
Tc = 25''C 100b
Maximum Power Dissipation PD W
TA = 25°C 3a
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
J ti -t -A bi ta R
unc lon o m en Steady State thJA 40 50 “CNV
Junction-to-Case (Drain) RthJc 1.3 1.6
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71767 www.vishay.com
S-05233-Rev. A, IT-Dec-OI
SUD19N20-90 VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 200
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 2
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=160V,Vss=0V 1
Zero Gate Voltage Drain Current loss VDS = 160 V, VGS = 0 V, To = 125°C 50 WA
VDS=160V,VGS=0V,TJ=175°C 250
On-State Drain Currentb IBM) Vros = 5 V, VGs = 10 V 40 A
VGS = 10 V, ID = 5 A 0.075 0.090
VGs=10V.|D=5A,TJ=125°C 0.190
Drain-Source On-State Resistanceb rDs(on) Q
VGS=1O\/,ID=5A,TJ=1750C 0.260
VGS=6V, b-- 5A 0.082 0.105
Forward Transconductanceb gfs VDS = 15 V, ID = 19 A 35 S
Dynamica
Input Capacitance Ciss 1800
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 180 pF
Reverse Transfer Capacitance Crss 80
Total Gate Charges Q9 34 42
Gate-Source Chargec Qgs VDS = 100 V, VGS = 10 V, ID = 19 A 8 n0
Gate-Drain Chargec di 12
Turn-On Delay Time0 tum”) 15 25
Rise Time tr VDD = 100 V, RL = 5.2 Q 50 75 ns
Turn-Off Delay TimeC tam ID _ 19 A, VGEN = 10 V, Re = 2.5 Q 30 45
Fall Timec If 60 90
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 50
Diode Forward Voltageb VSD IF = 19 A, VGS = O V 0.9 1.5
Source-Drain Reverse Recovery Time trr IF = 19 A, di/dt = 100 Afys 180 250 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71767
2 S-05233-Reu. A, 17-Dec-01
VISHAY SUD19N20-90
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 l I 40
Y'''',',",
VGs=10thru7V f"
Cai' Ci.:.]
o 20 O 20
g I' Tc = 125°C
I 5 V I
fl 10 fl 10
25°C \{
4 v l -55''C
O 2 4 6 8 IO 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
70 l 0.20
60 Tc = -55''C -
m.......---"" A o 15
<3 50 e---'""''" o: .
' o,,,,,,,-''''''""''' 25''C 8
53 40 f g
S / --- S, 0 10 7 Was = 6 V 4
l? 125°C o V
8 30 5 C.,...,..,,,,...,........-----''''"'''"
g / oe-"'''"'"" o c=rdr2CLT=ria-'"'''"
ts 20 / F, VGS - 10 V
L: g 0 05
0 0 00
O 10 20 30 40 0 10 20 30 40
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
2500 20
v = 100 V ow'''''
2000 E 16 - IUD: 19 A "
CL; Ciss oils.'
8 1500 i', 12
8 1000 (i-'; 8 /
500 C 8 4 /
w" rss Coss >
0 4O 80 120 160 200 0 IO 20 30 4O 50 60
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71767 www.vishay.com
S-05233-Rev. A, IT-Dec-OI 3
SUD19N20-90
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
3.0 I I I
Vss=10V /
2.5- ID=5A f
Source-Drain Diode Forward Voltage
V 2 0 5..t.t
ll,! E 1 5 g 10
O E / JI
L 1 0 A I
sr?, / w
8 "" -
" 0.5 /
-50 -25 0 25 50 75 100 125 150 175 O 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
25 100
20 Limited by rDS(on) 11(1) I'm,
-ss, 100 us
ig" "ss, slit" 10
E 15 _ E
tg ' 5
o "s, o
E 10 \ Es
I _ I 1
Cl 'ss 9
5 Tc = 25''C
Single Pulse
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
0.1 1 10 100 1000
Vros - Drain-tty-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle - 0.5
'if',' g
t - 0.1
J.l tt5
.5 E 0.02
o 0.05
a I I I
Single Pulse
10-4 10-3 1o-2 IO-I 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71767
S-05233-Reu. A, 17-Dec-01
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