SUD15N06-90L ,N-Channel 60-V (D-S) 175C MOSFET, Logic Level FaxBack 408-970-5600S-49634—Rev. D, 20-Sep-992-1SUD15N06-90LVishay Siliconix
SUD15N06-90L
N-Channel 60-V (D-S) 175C MOSFET, Logic Level
VISHAY
SUD15N06-90L
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET, Logic Level
PRODUCT SUMMARY
VDs (V) rDS(on) (Q)
ID (A)
0.065 V =10V
60 @ GS
0.090 @ VGS = 4.5 V
TO-252
-lr'lf
Top View
Order Number:
SUD15NO6-90L
Drain Connected to Tab
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS i 20 V
TC = 25°C 15
Continuous Drain Current (TJ = 175°C) ID
Tc = 100°C 12
Pulsed Drain Current IDM 30 A
Continuous Source Current (Diode Conduction) ls 15
Avalanche Current IAR 15
Repetitive Avalanche Energy (Duty Cycle 5 1%) L = 0.1 mH EAR 11 mJ
Tc = 25°C 37
Maximum Power Dissipation PD W
TA = 25''C 23
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambient Free Air, FR4 Board Mounta RmJA 60 70
Junction-to-Case Reuc 3.7 4.0
Notes:
a. 1.36 x 2.1 surface mounted on 1"x1"FR4 Board.
Document Number: 71087
S-49634-Rev. D, 20-Sep-99
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SUD15N06-90L
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 “A 60
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 HA 1.0 2.0 3.0
Gate-Body Leakage less Vos = 0 V, VGS = $20 V i 100 nA
bbs--60V,b1ss--0V 1
Zero Gate Voltage Drain Current Irsss VDS = 60 V, VGS = 0 V, TJ = 125°C 50 WA
VDS=60V.VGS=OV,TJ=175°C 150
On-State Drain Currentb loam) Vos = 5 V, VGS = 10 V 15 A
VGS = 10 V, ID = 10 A 0.050 0.065
Vss=10V,lD=10ArTu=125oC 0.12
. - - . b
Drain Source On State Resistance rDS(on) VGS = 10 V, ID = 10 A, TJ = 175°C 0.15 Q
VGS = 4.5 V, ID = 5 A (h065 0.090
Forward Transconductanceb gts VDS = 15 V, ID = 10 A 11 s
Dynamic
Input Capacitance Ciss 524
Output Capacitance Coss VGS = 0 V, Vos = 25 V, f= 1 MHz 98 pF
Reverse Transfer Capacitance Crss 28
Total Gate Chargec Q9 12 20
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 15 A 2 nC
Gate-Drain ChargeC di 3.5
Turn-On Delay Timec td(0n) 7 20
Rise TImeC tr VDD = 30 V, RL = 2 Q 8 25 ns
Turn-Off Delay Time0 tum“) ID _ 15 A, VGEN = 10 V, Rs = 2.5 Q 15 40
Fall Timec tf 7 20
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)
Pulsed Current ISM 30 A
Diode Forward Voltage VSD IF = 15 A, VGS = O V 0.9 1.2
Reverse Recovery Time trr IF = 15 A, di/dt = 100 Alps 29 60 ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width s 300 ps, duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71087
2-2 S-49634-Rev. D, 20-Sep-99
VISHAY
SUD15N06-90L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
Output Characteristics
VGS=1Othru6V
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
Transconductance
20 TC = -55''C -
ir?.".
g A 25''C
E 15 w,,,,,-'"'",
f? 125 C
g 10 rv''''''"-,--'"'';';-"-"-'-'--"
tc A,:::,',','.',", w.-,,,,--"'''''''''"
I o,,,-''''"
0 4 8 12 16 20
ID - Drain Current (A)
Capacitance
'k' 600 Ciss
6' 400
200 ts. Coss
0 IO 20 30 40 50 60
VDS - Drain-to-Source Voltage (V)
I D — Drain Current (A)
I’DS(on)- On-Resistance( S2)
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
T = 12 iD
4 C I 5 C
\ -55t
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
0n-Resistance vs. Drain Current
VGS = 4.5 V s.....,.--''''''''"
0.06 VGS = 10 V -
0 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
VDS = 30 V /
16- lro=15A /''"
s,,/''
O 4 8 12 16 20 24
Q9 - Total Gate Charge(nC)
Document Number: 71087
S-49634-Rev. D, 20-Sep-99
www.vishay.com . FaxBack 408-970-5600
SUD15N06-90L
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on)— On-Resistance ( Q )
(Nomallzed)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS= 10V
ID=10 A w'''''
2.0 ',,ps''''"
1 5 I I' - a
,,,P" 5 T J - 150 C
',,w''' o 10
"w'''" m
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
To - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
| D — Drain Current (A)
Normalized Effective Transient
Thermal Impedance
Drain Current vs. Case Temperature Sate Operating Area
's Limited
"ss, by r on
12 "s.
4 'N Tc = 25''C
Single Pulse
ID — Drain Current (A)
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71087
S-49634-Rev. D, 20-Sep-99
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