SUB85N08-08 ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175C MOSFET
SUB85N08-08-SUP85N08-08
N-Channel 75-V (D-S) 175C MOSFET
VISHAY
New Product
SUPlSUB85N08-08
Vishay Siliconix
N-Channel 75-v (D-S) 1750c MOSFET
PRODUCT SUMMARY
ste' (5)
V(BR)Dss(V) l'DS(on)(Q) Iro(A) ntifi'Jsie,' '
75 0.008@VGs=10V 85a l 1““ ho' bt s
tNs9' ew', o s't
'tll CGI''
TO-220AB eo D
TO-263
DRAIN connected to TAB
Top View
G D S S
SUB85N08-08
Top View
N-Channel MOSFET
SUP85N08-08
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 75
Gate-Source Voltage VGs l 20 V
Tc = 25°C 85a
Continuous Drain Current (T J = 175°C) b
Tc = 125''C 67a A
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25°C (TO-220AB and TO-263) 2500
Maximum Power Dissipation' PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 'C/W
Junction-to-Case Rthoc 0.6
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on l" square PCB (FR-4 material).
Document Number: 71165 www.vishay.com
S-01884-Rev. B, 28-Aug-00
SUPlSUB85N08-08
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 75 V
Gate-Threshold Voltage Vegan) VDS = VGS, ID = 250 WA 2.5
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V d: 100 nA
VDs=60V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 60 V, VGS = 0 V, TJ = 125°C 50 WA
VDs = 60 V, I/ss = 0 V, To = 175°C 250
On-State Drain Currenta loam) Vos 2 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0063 0.008
Drain-Source On-State Resistancea rDS(0n) VGS = 10 V, ID = 30 A, TJ = 125°C 0.014 Q
VGS=10V.ID=30A.TJ=175°C 0.018
Forward Transconductancea gfs Vos = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 5800
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 900 pF
Reverse Transfer Capacitance Crss 285
Total Gate Chargec Qg 100 150
Gate-Source Chargec Q9S VDS = 35 V, VGS = 10 V, ID = 85 A 35 nC
Gate-Drain Chargec di 25
Turn-On Delay Timec tdmn) 20 30
Rise 'I'Imec tr VDD = 35 V, RL = 0.4 Q 115 175 ns
Turn-Off Delay nmec tam) ID E 85 A, VGEN = 10 v, Rs = 2.5 Q 50 75
Fall Timec tf 80 120
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 85
Pulsed Current ISM 240 A
Forward Voltagea VSD IF = 85 A, VGs = 0 V 1.0 1.5 V
Reverse Recovery Time trr 70 120 ns
Peak Reverse Recovery Current IRWREC) IF = 85 A, di/dt = 100 Alps 4 7 A
Reverse Recovery Charge Qrr 0.14 0.30 “C
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature,
www.vishay.com
Document Number: 71165
S-01884-Rev. B, 28-Aug-00
VISHAY
New Product
SUPlSUB85N08-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10 thru 7 V
200 w-'''""
i Ci:]
g 150 E
Cl 100 CI
f 5 v E
50 -e--
4, 3 V
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55°C
"r-'''''"""" Cl
(7, 25°C ii;
t; 160 I g
g .,,,e"'''''" f,-';
.5 125°C 17,
g 120 I -'''"" dl
g /,/C,',,,C s...-"'"''''" 6
5 80 / v,,,,-''''" I
- / If
j, ff''' il"
CD 40 "
0 20 40 60 80 100
ID - Drain Current(A)
Capacitance
6000 g
ii; 5000 >0
'ti 4000 08)
0 3000 g,
O 2000 I
Crss V)
1000 / >
0 15 30 45 60 75
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
VGS=10V
O 20 40
ID - Drain Current (A)
Gate Charge
I/os = 35V
- ID=85A
sw''''
',,p''"
% - Total Gate Charge (nC)
Document Number: 71165
S-01884-Rev. B, 28-Aug-00
www.vishay.com
SUPlSUB85N08-08
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
a 2.0 //
E w''''' slit"
g "G" LC:
i?,' Ld 1.5 'g TJ=150°C
OJ E o 10
a F, "w''" g
O E 1.0 g
Ti' / I
a w,.,-''''' L”
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature(°C) VSD - Source-to-Drain Voltage(V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 95
90 - I =250 "
100 D “A ",--'''''"
IAv(A)@TA--25c'C S /
A tD 85 I
m ‘0 "
, 10 g "
- y "ee"''
IAV (A) @ TA = 150°C 80 "-"
1 ',,,-"
0.1 70
000001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) To - Junction Temperature CC)
www.vishay.com DocumentNumber: 71165
b4 S-01884-Rev. B, 28-Aug-00
VISHAY SUPlSUB85N08 08
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 1000
80 'c 10 us
's, 100
cg N. cg 100 H5
E 60 tti,! Limited
8 8 10 by r on 1 ms
g 40 g' 10 ms
I 1 100 ms
E E dc
20 1 Tc = 25°C
) Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Ambient Temperature CC) VDs - Drain-to-Source Voltage (V)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = os
T 0.02
Single P'ulse'
10-4 10-3 1o-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71165
www.vishay.com
S-01884-Rev. B, 28-Aug-00 2-5
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