SUB85N04-04 ,N-Channel 40-V (D-S) 175C MOSFETS-41261—Rev. C, 05-Jul-041SUP/SUB85N04-04Vishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWISE N ..
SUB85N08-08 ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175C MOSFET
SUB85N04-04
N-Channel 40-V (D-S) 175C MOSFET
VISHAY SUPlSUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175°C MOSFET
PRODUCT SUMMARY a.ie,t,f,t'irst'a'
V(BR)DSS (V) rDS(on) (Q) ID (A) 606 . 2e? (5)
40 0.004 @ VGS = 10 v 85 a A''il ““0“ Q?
1316““ ott' tts
tV 1‘ sst
ste tso
't ws' D
TO-220AB po
T0-263
DRAIN connected to TAB H Ll H
Top Mew
G D S S
Top 1flew
Ordering Information Ordering Information
SUP85N04.04 SUB85N04-04 N-Channel MOSFET
SUP85N04-04-E3 (Lead (Pb)-Free) SUB85N04-04-E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 4O
Gate-Source Voltage Vcs 20 V
To = 25°C 35a
Continuous Drain Current (T J = 175°C) ID
To = 125°C 85a A
Pulsed Drain Current IDM 240
Avalanche Current IAR 7O
Repetitive Avalanche Energyb L = 0.1 mH EAR 211 ml
Tc = 25"C (T O-220AB and TO-263) 2500
Maximum Power Dissipationb PD W
TA = 25''C (To-263)d 3.75
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient . RNA
Free Air (T O-220AB) 62.5 0CM]
Junction-to-Case RthJc 0.6
a. Package limited.
b. Duty cycle 5 1%.
C. See SOA curve for voltage derating.
d. When mounted on I" square PCB (FR-4 material).
Document Number: 71125 www.vishay.com
S-41261-Rev. C, 05-Jul-04 1
SUPlSUB85N04-04
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 0A 40 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 “A 2 4
Gate-Body Leakage less VDs = 0 V, VGS = 20 V 100 nA
VDS=4OV,VGS=0V 1
Zero Gate Voltage Drain Current 'DSS Vos = 40 V, Vas = 0 V, Tu = 125°C 50 g/h
VDs--40V,VGs--0V,Tu--1750C 250
On-State Drain Currenta low") VDS 2 5 V, VGS = 10 V 120 A
VGS =10 v, ID = 30 A 0.0031 0.004
Drain-Source On-State Resistancea roam) VGs = 10 V, ID = 30 A, To = 125°C 0.0055 Q
VGS-- 10V, ko--30 A,TJ= 175°C 0.007
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 7620
Output Capacitance Coss VGS = O V, Vos = 25 V, f = 1 MHz 1325 pF
Reverse Transfer Capacitance Crss 710
Total Gate Chargec Qg 160 250
Gate-Source Chargec Qgs Vos = 30 V, VGS = 10 V, ID = 85 A 40 n0
Gate-Drain Chargec di 55
Turn-On Delay TimeC tdwn) 20 35
Rise Timec tr VDD = 30 V, RL = 0.47 Q 115 175 ns
Turn-Off Delay Time0 tam, 'D E 85 A, VGEN = 10 V, R9 = 2.5 Q 75 115
Fall Timec tf 85 130
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 85
Pulsed Current ISM 240 A
Forward Voltage" VSD IF = 85 A, VGS = 0 V 1.1 1.4 V
Reverse Recovery Time trr 60 90 ns
Peak Reverse Recovery Current |RM(REC) IF = 85 A, di/dt = 100 Alps 2.6 4 A
Reverse Recovery Charge Qrr 0.08 0.15 uC
a. Pulse test; pulse width s 300 ps, duty cycle
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71125
S-41261-F%u. C, 05-Jul-04
VISHAY SUPlSUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 _ _ 250
VGS = 10 thru 7 V
200 e V 200
irir" ---- 'ii"
g 150 g 150
Cl 100 D 100
f f TC = 125"C /
50 50 _
(sv 25°C \1 f
0 l 0 J _
0 2 4 6 8 10 0 1 2 3 4 5 6 7
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
250 I 1 0.005
To = -551
200 A 0.004
A 25°C Ci
(9/ I VGS = 10 V
8 o,,,,,,,-"'' _,.--''' g
5 150 r r 125°C - 75 0.003
g / L,---''''''''''''''" a
8 100 I - CD 0.002
I 'jf,,''''''''''' J)
U, 50 f 0.001
0 0.000
0 20 40 60 80 100 120 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
12000 20
10000 Vos = 30 v
_E 16 - ID = 85 A
CL" Ciss g
g 8000 I?
2 a, 12 I
1‘3 6000 8
O iii, 8 I
I 4000 g /
Coss I
2000 ' 8 4
""--... >
0 8 16 24 32 40 0 60 120 180 240 300
VDs - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71125 www.vishay.com
S-41261-Rev. C, 05-Jul-04 3
SUPlSUB85N04-04
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
ros(on) — On-Resiistance
(Normalized)
I Dav (a)
On-Resistance vs. Junction Temperature
2.0 I _ I
VGS = 10 V
lo = 30 A
o,,,,,-'''''"
-50 -25 0 25 50 75 100 125 150 175
Tu - Junction Temperature (°C)
Avalanche Current vs. Time
IAV (A) © TA = 25''C
IAV (A) @TA= 150°C
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec)
ls — Source Current (A)
V(BR)DSS (V)
Source-Drain Diode Forward Voltage
TJ= 150°C
TJ=25°C
0.3 0.6 0.9 1.2
V30 - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
2 ID--250 “A
-25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
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Document Number: 71125
S-41261-F%u. C, 05-Jul-04
VISHAY SUPlSUB85N04-04
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 1000
"ii:.] Cd.]
- 4.. Limited
C 60 C
2 g by rDS(on)
8 5 10
5 40 5
20 1 TC = 25“C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Thermal Impedance
N-; 0.02 _
Single is;
Normalized Effective Transient
104 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71125 www.vishay.com
S-41261-Rev. C, 05-Jul-04
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