SUB85N03-07P ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUB85N03-07P
N-Channel 30-V (D-S) 175C MOSFET
VISHAY
SUP/SUB85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 17500 MOSFET
PRODUCT SUMMARY
V(BR)Dss (V) rDS(on) (C2) ID (AP
30 0.007@Vss= 10V 85a
0.01 @ VGS = 4.5 V 75
TO-220AB
TO-263
DRAIN connected to TAB H u H
Top View
SUB85N03-07P
Top View
SUP85NO3-07P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage Was l 20 V
To = 25°C 85a
Continuous Drain Current (TJ = 175°C) ID
TC = 100°C 64 A
Pulsed Drain Current IDM 240
Avalanche Current lAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
TC = 25°C (TO-220AB and TO-263) 1070
Maximum Power Dissipationb PD W
TA = 25°C (TO-263)d 3.75
Operating Junction and Storage Temperature Range Ts, Tsig -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 °CNV
Junction-to-Case Rthoc 1.4
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d When mounted on l" square PCB (FR-4 material).
DocumentNumber: 71147
S-00757-Rev. B, 10-Apr-00
www.vishay.com . FaxBack 408-970-5600
SUP/SUBB5N03-07P
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 0A 30 V
Gate-Threshold Voltage Vegan) VDS = VGS, ID = 250 WA 1 2
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V d: 100 nA
VDs=30V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 30 V, VGS = 0 V, TJ = 125°C 50 WA
v.33 = 30 V, I/ss = o v. To = 175°C 250
On-State Drain Currenta loam) Vos 2 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.006 0.007
VGs=10V,lD=30A,TJ=125''C 0.011
Drain-Source On-State Resistance roam) N/ss = 10 V, b = 30 A, To = 17500 0.015 C2
VGS=4.5 V, ID: 20A 0.01
Forward Transconductancea gts Vos = 15 V, ID = 30 A 20 S
Dynamicb
Input Capacitance Ciss 3720
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 715 pF
Reverse Transfer Capacitance Crss 370
Total Gate Chargeb Q9 60 120
Gate-Source Chargeb Qgs VDs = 15 V, VGs = 10 V, b = 85 A 13 n0
Gate-Drain Chargeb di 10
Turn-On Delay Timeb tuom 11 25
Rise Timeb t, VDD =15 V, RL = 0.18 Q 70 140 ns
Turn-Off Delay Tlmeb tum) lo E 85 A, VGEN = 10 V, Rs = 2.5 Q 50 100
Fall Timeb t, 105 200
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)°
Continuous Current Is 85
Pulsed Current ISM 200 A
Forward Voltage" VSD IF = 85 A, VGS = O V 1.2 1.5 V
Reverse Recovery Time trr IF = 85 A, di/dt = 100 Alps 55 100 ns
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Independent of operating temperature,
c. Guaranteed by design, not subject to production testing.
www.vishay.com . FaxBack 408-970-5600
DocumentNumber: 71147
S-00757-Rev. B, IO-Apr-OO
VISHAY
New Product
SUP/SUB85N03-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
250 V I I
/ Vss=10thru6V 5V
i Ci:]
g 150 E
C 4 v E
Cl 100 CI
2 V 3 V
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = -55''C
80 r/Cl,...., "'ci
60 J/C',''.''.'."] 1251
40 ///
9 f5 — Transconductance (S)
rDS(on) — On—Resistance ( Q)
0 20 40 60 80 100
ID - Drain Current(A)
Capacitance
C — Capacitance (pF)
)ss Coss
1000 "s.,...
Ves — Gate-to-Source Voltage (V)
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
20 C ///
25°C // ©
0 1,jt,,(zif/ -/'''l
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
0.010 VGS=4.5V
VGS = 10 V
0 20 40 60 80 100
ID - Drain Current (A)
Gate Charge
V05 = 50 V
8 - ID = 85 A
0 12 24 36 48 60
% - Total Gate Charge (nC)
DocumentNumber: 71147
S-00757-Rev. B, 10-Apr-00
www.vishay.com . FaxBack 408-970-5600
SUPlSUB85N03-07P
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 30 A
A 1.6 4/
8 ,.,,e-''' S,
fsi, 5 1.2 - E
b' h' . / 5 T " 150°C
/ll a " o 10
9: F, "'''" E
'l E 0.8 ,/ é
a s,.,-'"'' I
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature(°C) VSD - Source-to-Drain Voltage(V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 40
38 - I =250
100 D “A //
IAv(A) @TA=25°C ty
as I', 36
8 10 b' ,,w''''
IAv(A)@TA=1500C 34 /
1 ',-''''
0.1 30
000001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) To - Junction Temperature CC)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71147
b4 S-00757-Rev. B, IO-Apr-OO
VISHAY SUP/SUB85N03 07P
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 1000
"ss 100
cg "s, cg
E 60 'ss é Limited
8 8 10 by r on
t':5 40 , 5
E N, E
20 1 Tc = 25°C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Ambient Temperature CC) VDs - Drain-to-Source Voltage (V)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = os
Single Pulse
10-4 10-3 1o-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71147 www.vishay.com . FaxBack 408-970-5600
S-00757-Rev. B, 10-Apr-00 2-5
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