SUB75N03-04 ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175C MOSFET V (V) r () I (A)(BR) ..
SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUB75N03-04-SUP75N03-04
N-Channel 30-V (D-S) 175C MOSFET
VISHAY
SUP/SUB75N03-04
Vishay Siliconix
N-Channel 30-V (D-S), 175°C MOSFET
PRODUCT SUMMARY liytTt (Ch)
V(BRmss (V) roswn) (Q) ID (A) A1? sur' ')'jtf,]
30 0.004 75a l, tt
tNW' “G“Oée
'tlt. \Ne‘
TO-ZZOAB D
C) TO-263
H Ll H DRAIN connected to TAB
DRAIN connected to TAB G D S
Top Mew
G D s SUB75N03-04
Top Ihew S
SUP75N03-04
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS $20 V
Continuous Drain Current TC = 2500 I 75a
(To =175°C) TC = 125°C D 75a
Pulsed Drain Current IBM 250 A
Continuous Source Current (Diode Conduction) Is 75
Avalanche Current IAR 75
Avalanche Energy L = 0.1 mH EAS 280
Repetitive Avalanche Energyb L = 0.05 mH EAR 140 m
Tc = 25°C (TO-220AB and TO-263) 187c
Maximum Power Dissipation Po W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175
Lead Temperature I
(1/15" from case for 10 sec.) TO-220AB TL 300
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient . RNA
Free Air (TO-220AB) 62.5 °C/W
Junction-to-Case Rch 0.6
a. Package limited,
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on I" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
Document Number: 70745 www.vishay.com
S-04137-Rev. E, 18-Jun-01
SUP/SUB75N03-O4 VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 30
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 “A 1 3
Gate-Body Leakage less VDS = 0 V, VGS = cl: 20 V l 500 nA
Vros=30VVss=0V 1
Zero Gate Voltage Drain Current loss Vos = 30 V, VGS = 0 V, To = 125°C 50 WA
VDS=30V,VGS=0V,TJ=175°C 200
On-State Drain Currentb loam) VDS = 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 75 A 0.0034 0.004
VGS = 4.5 V, ID = 75 A 0.005 0.006
Drain-Source On-State Resistanceb roswn) Q
VGS=10V, ID=25A,TJ= 125°C 0.006
VGS = 10 V, ID = 25 A, T: = 175°C 0.008
Forward Transconductanceb gts VDS = 15 V, ID = 25 A 30 s
Dynamic
Input Capacitance Ciss 10742
Output Capacitance Coss VGS = 0 V, Vos = 25 V, f= 1 MHz 1811 pF
Reverse Transfer Capacitance Crss 775
Total Gate Charge Qg 200 250
Gate-Source Charge Q95 VDs = 30 V, VGs = 10 V, ID = 75A 40 nC
Gate-Drain Charge di 40
Turn-On Delay Time tam) 20 40
Rise Time tr VDD = so v, RL = 0.6 Q 40 ns
Turn-Off Delay Time td(off) ID _ 50 A, VGEN = 10 V, Rs = 2.5 Q 190
Fall Time tf 95
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltagep VSD IF = 75 A, VGs = 0 V 1.3 V
Reverse Recovery Time trr 70 120 ns
Peak Reverse Recovery Current IRMUSC) IF = 50 A, di/dt = 100 Alps 2.8 6 A
Reverse Recovery Charge Qrr 0.1 0.36 “C
Notes:
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width s 300 ps, duty cycle 3 2%,
www.vishay.com DocumentNumber: 70745
2-2 S-04137-Rev. E, 18-Jun-01
VISHAY
SUP/SUB75N03-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
250 _ I
v63 = 10,9, 8,7,6, 5V
200 4 V
'iii. f -""-"
E 150 ’
O 2 4 6 8 IO
Vos - Drain-to-Source Voltage (V)
Transconductance
150 25°C
TC = -55'C _
125 V''
-.r-'''"" ‘125°C 5
100 l// w---'"""""
50 'jf'''
9 rs —Transconductance (S)
0 20 40 60 80 100
VGS - Gate-to-Source Voltage (V)
Capacitance
C — Capacitance (pF)
O 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
| D — Drain Current
I’DS(on) — On-Resistance( Q )
Ves — Gate-to-Source Voltage (V)
Transfer Characteristics
50 Tc =| 125°C I
25°C /
"sssd a A
j j -55 u
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0 20 40 60 80 100 120
ID - Drain Current (A)
Gate Charge
Vos = 30 v
16 - ID = 75 A f
12 ,,,,,W'''''''
O 100 200 300 400
Qg - Total Gate Charge (nC)
DocumentNumber: 70745
S-04137-Rev. E, 18-Jun-01
www.vishay.com
SUP/SUB75N03-O4 VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 _ 100
VGS = 10 V
ID = 30 A
8 ""' E
5 1:T 1.5 2
."t7_) 3 ,,,--" g
/ls' E / g 10
C O 27
C) E 1.0 (/03
L w,,,,,,---''''" I
ff' 0.5
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
Ts - Junction Temperature (°C) N/sro - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
80 Limited A
Ci' "N 'ig"
sts 60 ' It,
'r, ‘5
c':) 40 3-? 10
0 25 50 75 100 125 150 175 0.1 1.0 10.0
TC - Case Temperature (°C) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
IO-s 10-4 Ity-i? Ity-l? Ity-l 1 3
Square Wave Pulse Duration (sec)
www.vishay.com DocumentNumber: 70745
2.4 S-04137-Rev. E, 18-Jun-01
:
www.loq.com
.
