SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelS-05110—Rev. D, 10-Dec-012-3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelS-05110—Rev. D, 10-Dec-012-1SUP/SUB70N04-10Vishay Siliconix ..
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SUB70N04-10
N-Channel 40-V (D-S) 175C MOSFET, Logic Level
VISHAY SUP/SUB7ON04-1O
Vishay Siliconix
N-Channel 40-V (D-S), 175°C MOSFET
li) nf
PRODUCT SUMMARY 0G ff),',',';'''
V(BR)D$S (V) rash", (Q) ID (A) 1n.1iii,?d'srs
0.010 @ VGS = 10 v 70 ',sissiso"
40 0.014 @ VGS = 4.5 V 58
TO-220AB
C) TO-263
DRAIN connected to TAB H U H
Top Vew
G D S S
SUB70N04-10
Top View
SUP70N04-1 0 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V08 40
Gate-Source Voltage VGS 120
Tc = 25°C 70
Continuous Drain Current (TJ = 175°C) ID
TC = 100°C 47
Pulsed Drain Current IDM 140
Avalanche Current IAR 60
Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ
Power Dissipation To = 25°C PD 107b W
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
PCB Mount (TO-263)C 35 4O
Junction-to-Ambient RthJA
Free Air (TO-220) 45 50 °CIW
Junction-to-Case RthJC 1.2 1.4
Notes:
a. Duty cycle 5 1%.
b. See SOA curve for voltage derating.
c. Surface mounted on 1" FR4 board.
Document Number: 70783
www.vishay.com
S-0511(y-Rev. D, IO-Dec-OI
SUP/SUB70N04-10
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 11A 40
Gate Threshold Voltage VGS(th) VDS = VGs, IDS = 250 WA 1 3 V
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDs=40V,Vss=0V 1
Zero Gate Voltage Drain Current loss VDS = 40 V, VGs = 0 V, T: = 125°C 50 11A
v.33: 40v,vGS=0v,TJ=175°C 150
On-State Drain Current3 Iro(on) VDs = 5 V, VGS = 10 V 70 A
VGS=10V, ID= 30A 0.008 0.010
VGs=10V,lD= 30 A,TJ= 125°C 0.014 0.017
VGS = 10 V, ID = 30 A, TJ =175°C 0.0175 0.022
Drain-Source On-State Resistancea roam) VGS = 4.5 V, '0 = 20 A 0.011 0.014 Q
VGS = 4.5 V, ID = 20 A, TJ = 125°C 0.019 0.024
VGS = 4.5 V, ID = 20 A, TJ = 175°C 0.024 0.031
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 57 S
Dynamich
Input Capacitance Ciss 2700
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 600 pF
Reversen Transfer Capacitance Crss 160
Total Gate ChargeC Q9 50 100
Gate-Source ChargeC Qgs VDS = 15 V, VGS = 10 V, ID = 70A 10 nC
Gate-Drain Chargec di 9
Turn-On Delay TimeC td(on) 14 30
Rise Timec t, VDD = 15 V, RL = 0.2 Q 12 30 ns
Turn-Off Delay TimeC td(off) ID = 70 A, VGEN = 10 V, Rs = 2.5 Q 58 100
Fall Timec 1f 30 60
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 70
Pulsed Current ISM 140 A
Forward Voltagea VSD IF = 70 A, VGs = 0 V 1.0 1.5 V
Reverse Recovery Time trr IF = 70 A, dildt = 100 A/gs 50 100 ns
Notes:
a. Pulsetest; pulse width 5 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
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DocumentNumber: 70783
S-05110-Rev. D, 10-Dec-01
VISHAY SUP/SUB7ON04-1O
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
150 I 150 _ _ (
VGs=10thru6V 'C'" y
120 5 V 120 o
Ct or''''"" Ci.] , 125°C
E 90 E 90
S 60 4 V E 60
_ 30 - 30
0 2 4 6 8 10 0 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
100 _ _ 0.030
TC = -55°C
80 ,/ 25°C - A 0.024
tf /'''1,,,,,,,,.,------ 125°C 3;
F, 60 of "''' .7 g 0.018
E / g; v63 = 4.5 v
So, 40 c 0.012 -.rrr-'''
g 0 VGS = 10 v
CD 20 .5 0.006
O 0.000
0 20 40 60 80 100 120 0 20 40 60 80 100 120
l/ss-Gate-to-Source Voltage (V) ID - Drain Current (A)
Capacitance Gate Charge
4000 10
[ v = 15 v
3200 Ciss li? 8 i |DG=S 70 A
8 2400 i; 6
Jg. 'r,
(1) 1600 id 4 pr
0 1 C 'i' /
800 "s., oss (1) 2
Crss "'"''---....._, O
0 8 16 24 32 40 0 10 20 30 40 50
Vos - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 70783
www.vishay.com
S-05110-Rev. D, IO-Dec-OI
SUP/SUB70N04-1O VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS= 10V
ID = 30 A
w,es"'''
Tu = 150°C
rDS(on) — On-ReSIstance( 9)
(Normalized)
Is — Source Current (A)
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T J - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature Safe Operating Area
80 200
100 10 HS
"ss Limited
A 60 "s, A by r 100 us
tC "s, _1'.C
t E 1 ms
Q 40 o
E S 10 ms
cy Cl 100 ms
o N. o 1 dc
- 20 _
0 25 50 75 100 125 150 175 0.1 1 10 50
TA - Ambient Temperature CC) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
10-5 10-4 10-3 10-2 IO-l 1 3
Square Wave Pulse Duration (sec)
www.vishay.com DocumentNumber: 70783
2.4 S-05110-Rev. D, 10-Dec-01
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