STW8NA80 Fast Delivery |IC PHOENIX CO.,LIMITED

STW8NA80 ,Trans MOSFET N-CH 800V 7.2A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW8NA80 STH8NA80FIV 800 VDS Drain-source Voltag ..
STW8NB100 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)1000 VDS GSV Drain ..
STW8NB80 ,NSTW8NB80N - CHANNEL 800V - 1.2Ω - 7.5A - TO-247PowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STW8NB90 ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW8NC80Z ,N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW8NC90Z ,N-CHANNEL 900V 1.1OHM 7.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
T810-600B-TR ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..

STW8NA80
N
STW8NA80
STH8NA80FI- CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA TYPICAL RDS(on)= 1.3Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100%AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This seriesof POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled witha new proprietary
edge termination concurto give the device low
RDS(on) and gate charge, unequalled rug-
gedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW8NA80 STH8NA80FI
VDS Drain-source Voltage (VGS =0) 800 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 800 V
VGS Gate-source Voltage ±30 V Drain Current (continuous)atTc =25oC 7.2 4.5 A Drain Current (continuous)atTc= 100oC 4.5 2.8 A
IDM(•) Drain Current (pulsed) 28.8 28.8 A
Ptot Total DissipationatTc =25oC 175 70 W
Derating Factor 1.4 0.56 W/oC
VISO Insulation Withstand Voltage (DC)  4000 V
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulse widthlimitedby safe operatingarea
TYPE VDSS RDS(on) ID
STW8NA80
STH8NA80FI
800V
800V
<1.50Ω
<1.50Ω
7.2A
4.5A
October 1998
TO-247 ISOWATT21823
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THERMAL DATA
TO-247 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 0.71 1.78 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%)
7.2 A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
700 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID =250 μAVGS =0 800 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc= 100oC
IGSS Gate-body Leakage
Current (VDS =0) VGS= ± 30V 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID= 250 μA 2.25 3 3.75 V
RDS(on) Static Drain-source On
Resistance VGS =10V ID =4A 1.3 1.5 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
7.2 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >ID(on) xRDS(on)max ID =4A 4.5 7.9 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS =0
STW8NA80 STH8NA80FI
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =400V ID =4A =4.7 Ω VGS =10V
(di/dt)on
Turn-on Current Slope
VDD =640V ID =8A =47 Ω VGS =10V
170 A/μs
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 400V ID =8A VGS =10V
100 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =640V ID =8A =4.7 Ω VGS =10V
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =7.2A VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =7.5A di/dt= 100 A/μs
VDD= 100V Tj =150oC
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
STW8NA80 STH8NA80FI
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.7 5.3 0.185 0.209 2.2 2.6 0.087 0.102 0.4 0.8 0.016 0.031 1 1.4 0.039 0.055 2 2.4 0.079 0.094 3 3.4 0.118 0.134 10.9 0.429 15.3 15.9 0.602 0.626 19.7 20.3 0.776 0.779 14.2 14.8 0.559 0.413 0.582 34.6 1.362 5.5 0.217 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
P025P
TO-247 MECHANICAL DATA
STW8NA80 STH8NA80FI
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 5.35 5.65 0.210 0.222 3.3 3.8 0.130 0.149 2.9 3.1 0.114 0.122 1.88 2.08 0.074 0.081 0.75 1 0.029 0.039 1.05 1.25 0.041 0.049 10.8 11.2 0.425 0.441 15.8 16.2 0.622 0.637 20.8 21.2 0.818 0.834 19.1 19.9 0.752 0.783 22.8 23.6 0.897 0.929 40.5 42.5 1.594 1.673 4.85 5.25 0.190 0.206 20.25 20.75 0.797 0.817 3.5 3.7 0.137 0.145 2.1 2.3 0.082 0.090 4.6 0.181 G3
P025C
ISOWATT218 MECHANICAL DATA
STW8NA80 STH8NA80FI
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STW8NA80 STH8NA80FI
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Partno	Mfg	Dc	Qty	Available	Descript
STW8NA80	ST	N/a	1979	avai	Trans MOSFET N-CH 800V 7.2A 3-Pin(3+Tab) TO-247