STW8NA60 Fast Delivery |IC PHOENIX CO.,LIMITED

STW8NA60 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW8NA60 STH8NA60FIV Drain-source Voltage (V = 0 ..
STW8NA80 ,Trans MOSFET N-CH 800V 7.2A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW8NA80 STH8NA80FIV 800 VDS Drain-source Voltag ..
STW8NB100 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)1000 VDS GSV Drain ..
STW8NB80 ,NSTW8NB80N - CHANNEL 800V - 1.2Ω - 7.5A - TO-247PowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STW8NB90 ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW8NC80Z ,N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
T810-600B-TR ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..

STW8NA60
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STW8NA60
STH8NA60FI- CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on)= 0.92Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100%AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW8NA60 STH8NA60FI
VDS Drain-source Voltage (VGS=0) 600 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 600 V
VGS Gate-source Voltage ±30 V Drain Current (continuous)atTc =25o C8 5 A Drain Current (continuous)atTc =100o C5.1 3.2 A
IDM(•) Drain Current (pulsed) 32 32 A
Ptot Total DissipationatTc =25oC 150 60 W
Derating Factor 1.2 0.48 W/oC
VISO Insulation Withstand Voltage (DC)  4000 V
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulsewidth limitedby safeoperating area
TYPE VDSS RDS(on) ID
STW8NA60
STH8NA60FI
600V
600V
< 1 Ω
< 1 Ω
October 1998
TO-247 ISOWATT21823
1/10
THERMAL DATA
TO-247 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 0.83 2.08 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%)
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
480 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS=0 600 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc= 100oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 30V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID= 250 μA2.25 3 3.75 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID =4A 0.92 1 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =4A 4.5 6.6 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS=0 1350
STW8NA60-STH8NA60FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =300V ID =4A =4.7 Ω VGS =10V
(see test circuit, figure3)
(di/dt)on Turn-on Current Slope VDD =480V ID =8A =47 Ω VGS =10V
(see test circuit, figure5)
200 A/μs
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 480V ID =8A VGS =10V 58 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =640V ID =8A =4.7 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗)Forward On Voltage ISD =8A VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =8A di/dt= 100 A/μs
VDD= 100V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Areafor TO-247 Safe Operating Areafor ISOWATT218
STW8NA60-STH8NA60FI
3/10
Thermal Impedancefor TO-247
Derating Curvefor TO-247
Output Characteristics
Thermal Impedancefor ISOWATT218
Derating Curvefor ISOWATT218
Transfer Characteristics
STW8NA60-STH8NA60FI
4/10
Transconductance
Gate Chargevs Gate-sourceVoltage
Normalized Gate Threshold Voltagevs
Temperature
Static Drain-source On Resistance
Capacitance Variations
Normalized On Resistancevs Temperature
STW8NA60-STH8NA60FI
5/10
Turn-on Current Slope
Cross-over Time
Accidental Overload Area
Turn-off Drain-source Voltage Slope
Switching Safe Operating Area
Source-drainDiode Forward Characteristics
STW8NA60-STH8NA60FI
6/10

Partno	Mfg	Dc	Qty	Available	Descript
STW8NA60	ST	N/a	22	avai	N