STW80NE06-10 ,N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW81101 ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 950 - 1100 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipment ..
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T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
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STW80NE06-10
N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFET
1/8October 2000
STW80NE06-10N-CHANNEL 60V - 0.0085Ω - 80A TO-247
STripFET™ POWER MOSFET
(1) ISD ≤80A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Current limited by package TYPICAL RDS(on) = 0.0085Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS DC-DC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS SOLENOID AND RELAY DRIVERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STW80NE06-10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STW80NE06-10
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
STW80NE06-10
Output Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
5/8
STW80NE06-10
Source-drain Diode Forward Characteristics Normalized Drain-Source Breakdown vs
Temperature
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STW80NE06-10
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
