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STW70N10F4STN/a2300avaiN-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in TO-247
STD70N10F4STMN/a2495avaiN-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK


STD70N10F4 ,N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAKAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, TO-247, DPAKD²PAKV Drain-source voltage ( ..
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STD75N3LLH6 ,N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
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SUD15N06-90L ,N-Channel 60-V (D-S) 175C MOSFET, Logic Level  FaxBack 408-970-5600S-49634—Rev. D, 20-Sep-992-1SUD15N06-90LVishay Siliconix 

STD70N10F4-STW70N10F4
N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK

October 2009 Doc ID 15207 Rev 3 1/18
STB70N10F4, STD70N10F4
STP70N10F4, STW70N10F4

N-channel 100 V , 0.015 Ω , 60 A, ST ripFET™ DeepGA TE™
Power MOSFET in TO-220, DP AK, TO-247, D2 PAK
Features
Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested
Application
Switching applications
Description

This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.

Figure 1. Internal schematic diagram


Table 1. Device summary

Contents STB/D/P/W70N10F4

2/18 Doc ID 15207 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB/D/P/W70N10F4 Electrical ratings
Doc ID 15207 Rev 3 3/18

1 Electrical ratings
Table 2. Absolute maximum ratings
Pulse width limited by safe operating area Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Table 3. Thermal data
When mounted on FR-4 board of 1 inch², 2 oz Cu

Electrical characteristics STB/D/P/W70N10F4

4/18 Doc ID 15207 Rev 3
2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)



Table 4. On/off states
Table 5. Dynamic
Table 6. Switching times
STB/D/P/W70N10F4 Electrical characteristics
Doc ID 15207 Rev 3 5/18

Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
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