IC Phoenix
 
Home ›  SS113 > STW55NM60ND,N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
STW55NM60ND Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STW55NM60NDTO247N/a10000avaiN-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)


STW55NM60ND ,N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)Electrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STW5NA90 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW5NA90STH5NA90FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSPRELIMINARY DATATYPE V R IDSS DS ..
STW5NB100 ,N-CHANNEL 1000STW5NB100®N - CHANNEL 1000V - 4Ω - 4.3A - TO-247PowerMESH™ MOSFETPRELIMINARY DATA TYPE V R IDSS DS( ..
STW5NB90 , N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET
STW5NK100Z ,N-CHANNEL 1000VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STW60N10 ,NSTH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH60N10 1 ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..


STW55NM60ND
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
December 2012 Doc ID 14169 Rev 3 1/12
STW55NM60ND

N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET
(with fast diode) in a TO-247 package
Datasheet — production data
Features
The worldwide best RDS(on) amongst the fast
recovery diode devices in TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
Application
Switching applications
Description

This FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.

Table 1. Device summary
Contents STW55NM60ND
2/12 Doc ID 14169 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW55NM60ND Electrical ratings
Doc ID 14169 Rev 3 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Pulse width limited by safe operating area ISD ≤ 51 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STW55NM60ND
4/12 Doc ID 14169 Rev 3
2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Characteristic value at turn off on inductive load.
Table 6. Dynamic
Pulsed: pulse duration= 300 μs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STW55NM60ND Electrical characteristics
Doc ID 14169 Rev 3 5/12
Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Electrical characteristics STW55NM60ND
2.1 Electrical characteristics (curves)


Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 6. Transconductance Figure 7. Static drain-source on-resistance
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED