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Partno	Mfg	Dc	Qty	Available	Descript
STW55NE10	ST	N/a	50	avai	N-CHANNEL 100V

STW55NE10 ,N-CHANNEL 100VSTW55NE10® N - CHANNEL 100V - 0.021Ω - 55A - TO247STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DST ..
STW55NM50N , N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET TO-247
STW55NM60N ,N-channel 600 V, 0.047 Ohm, 51 A MDmesh(TM) II Power MOSFET TO-247Electrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STW55NM60ND ,N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)Electrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STW5NA90 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW5NA90STH5NA90FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSPRELIMINARY DATATYPE V R IDSS DS ..
STW5NB100 ,N-CHANNEL 1000STW5NB100®N - CHANNEL 1000V - 4Ω - 4.3A - TO-247PowerMESH™ MOSFETPRELIMINARY DATA TYPE V R IDSS DS( ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..

STW55NE10
N-CHANNEL 100V
STW55NE10
N - CHANNEL 100V - 0.021Ω - 55A - TO247
STripFET POWER MOSFET TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
January 1999
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 55 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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