STW50N10 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW50N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTW50N10 100 V < 0.03 ..
STW50NB20 ,NSTW50NB20®N - CHANNEL 200V - 0.047Ω - 50A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW50NB2 ..
STW52NK25Z ,N-CHANNEL 250V-0.033Ohm-52A TO-247 Zener-Protected SuperMESH™MOSFETFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTW52NK25Z 250 V < 0.045 Ω 52 A 300 W
STW50N10
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STW50N10N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCRONOUS RECTIFICATION
January 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area ISD ≤ 60 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW50N102/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
(1) ISD ≤ 60 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Safe Operating Area Thermal Impedance
STW50N103/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STW50N104/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STW50N105/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STW50N106/8
