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STW48NM60N
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
February 2013 Doc ID 18313 Rev 5 1/13
STW48NM60NN-channel 600 V , 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET
in a TO-247 package
Datasheet — production data
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STW48NM60N2/13 Doc ID 18313 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW48NM60N Electrical ratings
Doc ID 18313 Rev 5 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 44 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Electrical characteristics STW48NM60N
4/13 Doc ID 18313 Rev 5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 6. Switching times
STW48NM60N Electrical characteristics
Doc ID 18313 Rev 5 5/13
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Electrical characteristics STW48NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance
STW48NM60N Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Output capacitance stored energy Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized on-resistance vs
temperature
