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STW47NM50STN/a60avaiN-CHANNEL 500 V


STW47NM50 ,N-CHANNEL 500 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
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STW48NM60N ,N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified).CASETable 4. On/off statesSymbol P ..
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T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..


STW47NM50
N-CHANNEL 500 V
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ADVANCED DATA

January 2003
STW47NM50

N-CHANNEL 500V- 0.065Ω -45A TO-247
MDmesh™Power MOSFET
(1)ISD ≤45A, di/dt ≤400A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX. TYPICAL RDS(on)= 0.065Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION

The MDmesh™isa new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product hasan outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance thatis significantly better than
thatof similar competition’s products.
APPLICATIONS

The MDmesh™ familyis very suitablefor increasing
power densityof high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limitedby safe operating area
STW47NM50
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration=300μs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
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STW47NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration= 300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
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Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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STW47NM50
STW47NM50
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