STW28NK60Z ,N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW29NK50Z ,N-CHANNEL 500 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 500 VV Drain ..
STW29NK50ZD ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STW30N65M5 ,N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247Absolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAKTO-220FPTO-247, I²PAKV Gate-source v ..
STW30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STW30NM60D ,N-CHANNEL 600VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW28NK60Z
N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFET
1/10November 2004
STW28NK60ZN-CHANNEL 600 V - 0.155Ω - 27A TO-247
Zener-Protected SuperMESH™ MOSFET
Rev. 1
STW28NK60Z2/10
Table 3: Absolute Maximum ratings(*) Pulse width limited by safe operating area
(1) ISD≤ 27 A, di/dt≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ≤ TJMAX
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/10
STW28NK60Z
TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
STW28NK60Z4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 8: Static Drain-source On Resistance
5/10
STW28NK60Z
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
perature
Figure 14: Normalized BVDSS vs Temperature
STW28NK60Z6/10
Figure 15: Maximum Avalanche Energy vs
Temperature
