STW22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247Absolute maximum ratingsValueSymbol Parameter UnitD²PAK TO-220TO-220FPI²PAK TO-247V Gate- source vo ..
STW23NM60ND ,N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol ..
STW24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247Electrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
STW25NM50N ,N-CHANNEL 550V @ TjMAXFeatures Figure 1: PackageTYPE V (@Tj ) I RDSS MAX D DS(on)STB25NM50N-1 550V 21.5 A 0.150 ΩSTF25NM5 ..
STW25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 6: On /OffSymbol Parameter ..
STW26NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247
January 2011 Doc ID 15853 Rev 4 1/23
STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60NN-channel 600 V , 0.2 Ω , 16 A MDmesh™ II Power MOSFET
in D2P AK, TO-220FP, I2P AK, TO-220 and TO-247
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
ApplicationSwitching applications
DescriptionThese devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STB/F/I/P/W22NM60N2/23 Doc ID 15853 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
STB/F/I/P/W22NM60N Electrical ratings
Doc ID 15853 Rev 4 3/23
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Thermal data
Electrical characteristics STB/F/I/P/W22NM60N
4/23 Doc ID 15853 Rev 4
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STB/F/I/P/W22NM60N Electrical characteristics
Doc ID 15853 Rev 4 5/23
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
