STW20NK50Z ,N-CHANNEL 500VSTW20NK50ZN-CHANNEL 500V - 0.23Ω - 17A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwDSS ..
STW20NK70Z ,N-CHANNEL 700VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)700 VDS GSV Drain-g ..
STW20NM50 ,N-CHANNEL 500VSTW20NM50N-CHANNEL 500V - 0.20Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM50 500V ..
STW20NM50FD ,N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-247 MDMESH POWER MOSFETSTW20NM60N-CHANNEL 600V - 0.26Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM60 600V ..
STW20NM60FD ,N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFETAPPLICATIONSn ZVS PHASE-SHIFT FULL BRIDGECONVERTERS FOR SMPS AND WELDINGEQUIPMENTORDERING INFORMATI ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW20NK50Z
N-CHANNEL 500V
1/9October 2002
STW20NK50ZN-CHANNEL 500V - 0.23Ω - 17A TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STW20NK50Z
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤17A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/9
STW20NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STW20NK50Z
Transfer CharacteristicsOutput Characteristics
Static Drain-source On ResistanceTransconductance
Thermal Impedance For TO-247Safe Operating Area For TO-247
5/9
STW20NK50Z
Normalized BVDSS vs Temperature
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STW20NK50Z
Maximum Avalanche Energy vs Temperature
