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STF18NM60N-STP18NM60N-STW18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
October 2012 Doc ID 15868 Rev 4 1/21
STB18NM60N, STF18NM60N,
STP18NM60N, STW18NM60NN-channel 600 V , 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET
in D2P AK, TO-220FP , TO-220 and TO-247
Datasheet — production data
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N2/21 Doc ID 15868 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical ratings
Doc ID 15868 Rev 4 3/21
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDD ≤ 80 % V(BR)DSS, VDS(peak) ≤ V(BR)DSS
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu.
Electrical characteristics STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
4/21 Doc ID 15868 Rev 4
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Table 6. Switching times
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical characteristics
Doc ID 15868 Rev 4 5/21
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
