STW16NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW16NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATA TYPE V R IDSS DS(on) ..
STW18NB40 ,N-CHANNEL 400V 0.19 OHM 18.4A TO-247/ISOWATT218 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW18NB40 STH18NB40FIV Drain-source Voltage (V = ..
STW18NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STW18NK80Z ,N-CHANNEL 800V 0.34 OHM 18A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STW18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247Electrical characteristics(T =25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol Pa ..
STW20NA50 ,NSTW20NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTW20NA50 500 V ..
T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
STW16NA60
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STW16NA60N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE
RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
January 1998
1/5
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW16NA602/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STW16NA603/5
STW16NA604/5
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STW16NA605/5
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