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STW12NB60STN/a475avaiN-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET


STW12NB60 ,N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STW12NC60 ,N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STW12NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)800 VDS GSV Drain- ..
STW12NK80Z. ,N-CHANNEL 800VSTW12NK80ZN-CHANNEL 800V - 0.65Ω - 10.5A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwD ..
STW12NK90Z ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTW12NK90ZN-CHANNEL 900V - 0.72Ω -11A TO-247Zener-Protected SuperMESH™ Power MOSFETTYPE V R I PwDSS ..
STW12NK90Z. ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
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STW12NB60
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
1/8May 2001
STW12NB60

N-CHANNEL 600V - 0.5Ω - 12A TO-247
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS

(1)ISD ≤12A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW12NB60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/8
STW12NB60
Safe Operating Area Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STW12NB60
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
5/8
STW12NB60
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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