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STW120NF10STN/a120avaiN-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package


STW120NF10 ,N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 packageAbsolute maximum ratingsValue UnitSymbol ParameterTO-220, TO-247, TO-220FPD²PAKV Drain-source volta ..
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STW120NF10
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package
May 2011 Doc ID 9522 Rev 7 1/21
STP120NF10, STB120NF10
STF120NF10, STW120NF10

N-channel 100 V , 0.009 Ω , 110 A ST ripFET™ II Power MOSFET
in TO-247, TO-220, D²P AK, TO-220FP
Features
Exceptional dv/dt capability 100% avalanche tested Application oriented characterization
Application
Switching applications
Description

These devices are N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process has specifically been
designed to minimize the on-resistance. It is
therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for telecom and computer application.
It is also intended for any applications with low
gate drive requirements.
Figure 1. Internal schematic diagram


Table 1. Device summary
Contents STB/F/PW120NF10
2/21 Doc ID 9522 Rev 7
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STB/F/PW120NF10 Electrical ratings
Doc ID 9522 Rev 7 3/21
1 Electrical ratings
Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed. Pulse width limited by safe operating area. ISD ≤ 120 A, di/dt ≤ 300 A/µs, VDD = 80%V(BR)DSS Starting Tj = 25 °C, ID = 60 A, VDD = 50 V
Table 3. Thermal resistance
When mounted on 1inch² FR-4 board, 2 oz Cu
Electrical characteristics STB/F/PW120NF10
4/21 Doc ID 9522 Rev 7
2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
For TO-220FP ID = 40 A
Table 5. Dynamic
Pulsed: pulse duration=300µs, duty cycle 1.5%
STB/F/PW120NF10 Electrical characteristics
Doc ID 9522 Rev 7 5/21
Table 6. Switching times
Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
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