STW11NK100Z ,N-CHANNEL 1000V 1.1 OHM 8.3A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)1000 VDS GSV Drain- ..
STW11NK90Z ,N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STW11NM80 ,N-CHANNEL 800 VAbsolute Maximum ratingsSymbol Parameter Value Unit2TO-220/D PAKTO-220FPTO-247V Drain-source Voltag ..
STW11NM80 ,N-CHANNEL 800 Vapplications in particular for Flybackand Forward converter topologies and for ignitioncircuits in ..
STW11NM80 ,N-CHANNEL 800 VAPPLICATIONSThe 800 V MDmesh™ family is very suitable forsingle switch
STW120NF10 ,N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 packageAbsolute maximum ratingsValue UnitSymbol ParameterTO-220, TO-247, TO-220FPD²PAKV Drain-source volta ..
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T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
STW11NK100Z
N-CHANNEL 1000V 1.1 OHM 8.3A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/9December 2003
STW11NK100ZN-CHANNEL 1000V- 1.1Ω -8.3A TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
STW11NK100Z2/9
ABSOLUTE MAXIMUM RATINGS) Pulsewidth limitedby safeoperating area
(1)ISD ≤8.3A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/9
STW11NK100Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STW11NK100Z4/9
Thermal Impedance
Transconductance
TransferOutput Characteristics
Safe Operating Area
5/9
STW11NK100Z
Normalized BVDSSvs Temperature
Normalized On Resistancevs Temperature
Capacitance VariationsGate Chargevs Gate-source Voltage
Normalized Gate Threshold Voltagevs Temp.
Source-drain Diode Forward Characteristics
STW11NK100Z6/9
Maximum Avalanche Energyvs Temperature
