IC Phoenix
 
Home ›  SS112 > STV240N75F3,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 package
STV240N75F3 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STV240N75F3STN/a27avaiN-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 package


STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
STV300NH02L ,N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10Electrical characteristics(Tcase =25°C unless otherwise specified)Table 4. On /off statesSymbol Par ..
STV3500 ,Integrated Up-Converter with 32-bit CPU Core with Video Enhancers and Bitmap On-Screen DisplayFEATURES – Progressive display mode (60 Hz, 525 lines) for full-screen graphic planes■ Versatile in ..
STV3550 ,LCD and Matrix Display TV ProcessorFeaturesVideo and Graphic planes■ Fully-programmable Digital Video Output Stage for direct ■ High-P ..
STV3550B ,LCD and Matrix Display TV ProcessorFunctional Description .....977.7.3 PIO Pad Connection & Control .987.7.4 Clock Generation ....997. ..
STV5111 ,RGB HIGH VOLTAGE VIDEO AMPLIFIERapplications.ORDER CODE: STV5111Figure 1. PIN CONNECTIONS15 BLUE FEEDBACK14 BLUE CATHODE CURRENT13 ..
T7289A , DS1 LINE INTERFACE
T-7290A-EL , T7290A DS1/T1/CEPT Line Interface
T7290A-EL , T7290A DS1/T1/CEPT Line Interface
T73227 , 27 MHz VCXO Clock Generator IC
T73227 , 27 MHz VCXO Clock Generator IC
T73227 , 27 MHz VCXO Clock Generator IC


STV240N75F3
N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 package
November 2014 DocID14595 Rev 4 1/14
STV240N75F3

N-channel 75 V, 3 mΩ typ., 200 A STripFET™ F3
Power MOSFET in a PowerSO-10 package
Datasheet - production data
Features
Conduction losses reduced Low profile, very low parasitic inductance
Applications
Switching applications
Description

This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
Table 1. Device summary
Contents STV240N75F3
2/14 DocID14595 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
DocID14595 Rev 4 3/14
STV240N75F3 Electrical ratings
1 Electrical ratings

Table 2. Absolute maximum ratings
Current limited by package Pulse width limited by safe operating area Starting Tj = 25 °C, ID = 60 A, VDD = 15 V
Table 3. Thermal data
When mounted on 1 inch² FR-4 2 oz Cu.
Electrical characteristics STV240N75F3
4/14 DocID14595 Rev 4
2 Electrical characteristics

(TCASE =25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic
Table 6. Switching times
DocID14595 Rev 4 5/14
STV240N75F3 Electrical characteristics

Table 7. Source drain diode
Current limited by package Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STV240N75F3
2.1 Electrical characteristics (curves)
Figure 3. Safe operating area Figure 4. Thermal impedance
Figure 5. Output characteristics Figure 6. Transfer characteristics
Figure 7. Normalized BVDSS vs temperature Figure 8. Static drain-source on-resistance
STV240N75F3 Electrical characteristics
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs
temperature
Figure 12. Normalized on-resistance vs
temperature
Figure 13. Source-drain diode forward
characteristics
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED