STU9NC80ZI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
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STU9NC80ZI
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
1/10Sep 2000
STU9NC80Z
STU9NC80ZIN-CHANNEL 800V - 0.82Ω - 8.6A Max220/I-Max220 TYPICAL RDS(on) = 0.82Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONThe third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤8.6A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*)Limited only by maximum temperature allowed
STU9NC80Z/STU9NC80ZI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STU9NC80Z/STU9NC80ZI
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)
SWITCHING OFF (INDUCTIVE LOAD)
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. ΔVBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
STU9NC80Z/STU9NC80ZI
Safe Operating Area For I-Max220Safe Operating Area For Max220
Thermal Impedance For Max220
Output Characteristics
5/10
STU9NC80Z/STU9NC80ZI
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
STU9NC80Z/STU9NC80ZI
Source-drain Diode Forward Characteristics
