STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..
STU9NC80ZI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STV0042A/Z ,ANALOG SATELLITE SOUND AND VIDEO PROCESSORElectrical Characteristics . 30Chapter 9 Package Mechanical Data .35Chapter 10 Revision His ..
STV0042A/Z ,ANALOG SATELLITE SOUND AND VIDEO PROCESSORTable of ContentsChapter 1 General Information 31.1 Pin Description ......3Chapter 2 Circui ..
STV0056A ,SATELLITE SOUND AND VIDEO PROCESSORSTV0056ASATELLITE SOUND AND VIDEO PROCESSORSOUND Figure 1. Package■ TWO INDEPENDENT SOUND DEMODULAT ..
STV0056AF ,SATELLITE SOUND AND VIDEO PROCESSORSTV0056AFSATELLITE SOUND AND VIDEO PROCESSORSOUND.TWO INDEPENDENT SOUND DEMODULATORS.PLL DEMODULATI ..
T6K34 ,Row Driver LSI for Dot Matrix Graphic LCDT6K34 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Preliminary T6K34 Row Driver LS ..
T6M19 ,T6M19, JT6M19-AS Single-Chip CMOS LSI for LCD CalculatorsFeatures 12-digit display plus 2-digit code at the right margin. Scientific and engineering ..
T6M45 ,T6M45, JT6M45-AS CMOS Single-Chip LSI for LCD CalculatorFeatures: 12 digits or 10 digits (selectable with a pin-programmable) of data, 2 digits of sign, ..
T6M81A ,CMOS Single-Chip LSI for LCD CalculatorFeatures Weight: 1.52 g (typ.) Display: 16 digits of data, 1 digit of sign, error symbol, mem ..
T6N71B ,RFID (Radio Frequency tag) Reader and Writer Interface LSIAbsolute Maximum Ratings Operating Rating Parameter Symbol Unit Operating Ambient Temperature T 20 ..
T7 ,Industrial GradeELECTRICAL SPECIFICATIONSResistive Element CermetElectrical Travel 270° ± 15° Resistance Range 10 ..
STU9NB80
N-CHANNEL 800V
STU9NB80N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247
PowerMESH MOSFET TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 9.3A, di/dt ≤ 200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
July 1999
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STU9NB802/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STU9NB803/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STU9NB804/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STU9NB805/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STU9NB806/8
