STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STU85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..
STU9NC80ZI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STV0042A/Z ,ANALOG SATELLITE SOUND AND VIDEO PROCESSORElectrical Characteristics . 30Chapter 9 Package Mechanical Data .35Chapter 10 Revision His ..
T6K34 ,Row Driver LSI for Dot Matrix Graphic LCDT6K34 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Preliminary T6K34 Row Driver LS ..
T6M19 ,T6M19, JT6M19-AS Single-Chip CMOS LSI for LCD CalculatorsFeatures 12-digit display plus 2-digit code at the right margin. Scientific and engineering ..
T6M45 ,T6M45, JT6M45-AS CMOS Single-Chip LSI for LCD CalculatorFeatures: 12 digits or 10 digits (selectable with a pin-programmable) of data, 2 digits of sign, ..
T6M81A ,CMOS Single-Chip LSI for LCD CalculatorFeatures Weight: 1.52 g (typ.) Display: 16 digits of data, 1 digit of sign, error symbol, mem ..
T6N71B ,RFID (Radio Frequency tag) Reader and Writer Interface LSIAbsolute Maximum Ratings Operating Rating Parameter Symbol Unit Operating Ambient Temperature T 20 ..
T7 ,Industrial GradeELECTRICAL SPECIFICATIONSResistive Element CermetElectrical Travel 270° ± 15° Resistance Range 10 ..
STD7NM60N-STF7NM60N-STU7NM60N
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in DPAK package
November 2010 Doc ID 16472 Rev 4 1/17
STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60NN-channel 600 V , 5 A, 0.84 Ω , DP AK, TO-220FP , TO-220, IP AK
second generation MDmesh™ Power MOSFET
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
ApplicationSwitching applications
DescriptionThese devices are N-channel Power MOSFETs
realized using the second generation of
MDmeshTM technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
Table 1. Device summary
Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N2/17 Doc ID 16472 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical ratings
Doc ID 16472 Rev 4 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Table 3. Thermal data
Table 4. Thermal data
Electrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
4/17 Doc ID 16472 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristics
Doc ID 16472 Rev 4 5/17
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
