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STU13NB60STN/a221avaiOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN


STU13NB60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTU13NB60N-CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU13NB6 ..
STU14NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTU14NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STU2240NL , N-Channel E nhancement Mode Field Effect Transistor
STU2555NL , N-Channel E nhancement Mode Field Effect Transistor
STU3030NL , N-Channel Logic Level E nhancement Mode Field Effect Transistor
STU3030NLS , N-Channel Logic Level E nhancement Mode Field Effect Transistor
T6817-TKS ,Dual Triple DMOS Output Driver with Serial Input Controlapplications.Each of the 3 high-side and 3 low-side drivers is capable of driving currents up to600 ..
T6817-TKSY , Dual Triple DMOS Output Driver with Serial Input Control
T6818 ,40-V triple halfbridge driverapplications.Rev. 4530C–BCD–11/03Figure 1.
T6818 ,40-V triple halfbridge driverFeatures Supply Voltage up to 40 V R Typically 0.5Ω at 25°C, Maximum 1Ω at 150°CDSon Up to 1.5 A ..
T6818 ,40-V triple halfbridge driverFeatures Supply Voltage up to 40 V R Typically 0.5Ω at 25°C, Maximum 1Ω at 150°CDSon Up to 1.5 A ..
T6818 ,40-V triple halfbridge driverapplications.T6818/T6828Each of the 3 high-side and 3 low-side drivers is capable to drive currents ..


STU13NB60
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STU13NB60
N-CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
PRELIMINARY DATA
TYPICAL RDS(on) = 0.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area (1) ISD ≤13A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
October 1997
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STU13NB60

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STU13NB60

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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 4: Gate Charge test Circuit
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STU13NB60
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. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STU13NB60

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