STU10NM60N ,N-channel 600 V, 0.53 Ohm, 10 A, IPAK MDmesh(TM) II Power MOSFETElectrical characteristics(Tcase =25 °C unless otherwise specified)Table 5. On /off statesSymbol Pa ..
STU13NB60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTU13NB60N-CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTU13NB6 ..
STU14NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTU14NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STU2240NL , N-Channel E nhancement Mode Field Effect Transistor
STU2555NL , N-Channel E nhancement Mode Field Effect Transistor
STU3030NL , N-Channel Logic Level E nhancement Mode Field Effect Transistor
T6816-TIQ ,40-V Dual Hex Output Driver with Serial Input ControlFeatures• Six High-side and Six Low-side Drivers Outputs Freely Configurable as Switch, Half Brid ..
T6817 ,Dual triple driver with 16-bit serial interfaceFeatures• Three High-side and Three Low-side Drivers Outputs Freely Configurable as Switch, Half B ..
T6817-TKQ ,Dual Triple DMOS Output Driver with Serial Input ControlFeatures• Three High-side and Three Low-side Drivers Outputs Freely Configurable as Switch, Half B ..
T6817-TKS ,Dual Triple DMOS Output Driver with Serial Input Controlapplications.Each of the 3 high-side and 3 low-side drivers is capable of driving currents up to600 ..
T6817-TKSY , Dual Triple DMOS Output Driver with Serial Input Control
T6818 ,40-V triple halfbridge driverapplications.Rev. 4530C–BCD–11/03Figure 1.
STU10NM60N
N-channel 600 V, 0.53 Ohm, 10 A, DPAK MDmesh(TM) II Power MOSFET
July 2013 DocID15764 Rev 7 1/27
STP10NM60N, STU10NM60NN-channel 600 V , 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP , I²PAK, TO-220 and IPAK packages
Datasheet - production data
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N2/27 DocID15764 Rev 7
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DocID15764 Rev 7 3/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 10 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristicsSTD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
4/27 DocID15764 Rev 7
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Table 7. Switching times
DocID15764 Rev 7 5/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60NElectrical characteristics
Table 8. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
