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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
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STTH806TTI
TURBOSWITCH
STTH806TTIFebruary 2003-Ed:4B
TURBOSWITCH™ Tandem 600V ULTRA-FAST BOOST DIODE
The TURBOSWITCH “H”is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH“H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION ESPECIALLY SUITEDAS BOOST DIODEIN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS. DESIGNED FOR HIGH DI/DT OPERATION. ULTRA-FAST RECOVERY CURRENT TO
COMPETE WITH GaAs DEVICES. SIZE
DIMINUTIONOF MOSFET AND HEATSINKS
ALLOWED. INTERNAL CERAMIC INSULATED PACKAGE
ALLOWS FLEXIBLE HEATSINKING ON
COMMONOR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT VOLTAGE BALANCE
NETWORK. INSULATED VERSION::
Insulated voltage= 2500 V(RMS)
Capacitance=7pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting valuesfor both diodesin series)
MAJOR PRODUCTS CHARACTERISTICSTM: TURBOSWITCHisa trademarkof STMicroelectronics
STTH806TTIPulsetest:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:
P=1.8xIF(AV)+0.1IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS(for both diodes)
THERMAL AND POWER DATA
RECOVERY CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH806TTI0123456789 100
P1(W)
Fig.1: Conduction losses versus averagecurrent.
IFM(A)
Fig.2: Forward voltage drop versus forward
current.
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration. 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt (90%
confidence). 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig.4: Peak reverse recovery current versus
dIF/dt (90% confidence). 50 100 150 200 250 300 350 400 450 5000
140
Qrr(nC)
Fig.6: Reverse charges versus dIF/dt (90%
confidence).
STTH806TTI 50 75 100 1250.0
Fig.8: Relative variationof dynamic parameters
versus junction temperature(reference:Tj= 125°C). 50 100 150 200 250 300 350 400 450 5000
VFP(V)
Fig.9: Transient peak forward voltage versus
dIF/dt (90% confidence). 50 100 150 200 250 300 350 400 450 5000
tfr(ns)
Fig.10: Forward recovery time versus dIF/dt (90%
confidence). 50 100 150 200 250 300 350 400 450 5000.0
S factor
Fig.7: Softness factor versus dIF/dt (typical
values).
STTH806TTI Cooling method:C Recommended torque value:0.8 N.m. Maximum torque value:1 N.m. Epoxy meets UL94,V0
Information furnishedisbelievedtobeaccurateandreliable.However,STMicroelectronics assumesno responsibility fortheconsequencesof
useofsuch informationnorfor anyinfringementofpatentsorother rightsofthird parties which mayresultfromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express written
approval ofSTMicroelectronics.
TheSTlogoisa registered trademarkof STMicroelectronics 2003 STMicroelectronics- PrintedinItaly-All rights reserved.
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PACKAGE MECHANICAL DATATO-220AB
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