IC Phoenix
 
Home ›  SS111 > STTH806D-STTH806DTI-STTH806DTI.,TANDEM 600V HYPERFAST BOOST DIODE
STTH806D-STTH806DTI-STTH806DTI. Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STTH806DST N/a1000avaiTANDEM 600V HYPERFAST BOOST DIODE
STTH806DTISTN/a600avaiTANDEM 600V HYPERFAST BOOST DIODE
STTH806DTI. |STTH806DTISTN/a31avaiTANDEM 600V HYPERFAST BOOST DIODE


STTH806D ,TANDEM 600V HYPERFAST BOOST DIODE®STTH806DTITandem 600V HYPERFAST BOOST DIODEMAJOR PRODUCTS CHARACTERISTICS12I 8AF(AV)V 600 VRRMTj ( ..
STTH806DIRG ,Turbo 2 ultrafastapplications. Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwi ..
STTH806DTI ,TANDEM 600V HYPERFAST BOOST DIODEFEATURES AND BENEFITSInsulated TO-220ABn ESPECIALLY SUITED AS BOOST DIODE INCONTINUOUS MODE POWER F ..
STTH806DTI. ,TANDEM 600V HYPERFAST BOOST DIODE®STTH806DTITandem 600V HYPERFAST BOOST DIODEMAJOR PRODUCTS CHARACTERISTICS12I 8AF(AV)V 600 VRRMTj ( ..
STTH806G , Turbo 2 ultrafast - high voltage rectifier
STTH806TTI ,TURBOSWITCHFEATURES AND BENEFITS Insulated TO-220ABn ESPECIALLY SUITED AS BOOST DIODE INCONTINUOUS MODE POWER ..
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1|| TOSHIBA (UC/UP) 1. GENERAL The T6668 is ..
T6801 ,Single-channel driver 25 mA output with thermal monitoringFeatures Input Comparator with Schmitt-trigger Characteristic Input Clamping Current Capability o ..
T6801-TAQ ,Single-channel Driver IC with Driver IC with MonitoringFeatures Input Comparator with Schmitt-trigger Characteristic Input Clamping Current Capability o ..
T6816 ,40-V dual Hexdriver with serial input controlapplications and the industrial 24-V supply.It controls up to 12 different loads via a 16-bit dataw ..
T6816 ,40-V dual Hexdriver with serial input controlFeatures• Six High-side and Six Low-side Drivers  Outputs Freely Configurable as Switch, Half Brid ..
T6816 ,40-V dual Hexdriver with serial input controlapplications.Overvoltage protection is matched to the requirements of the 24-V industrial voltagean ..


STTH806D-STTH806DTI-STTH806DTI.
TANDEM 600V HYPERFAST BOOST DIODE
STTH806DTI
October 2003-Ed:2A
Tandem 600V HYPERFAST BOOST DIODE
The TURBOSWITCH “H”is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH“H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION
ESPECIALLY SUITEDAS BOOST DIODEIN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZINGOF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET AND FLEXIBLE HEATSINKING ON
COMMONOR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN PACKAGE CAPACITANCE: C=7pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values)
MAJOR PRODUCTS CHARACTERISTICS
STTH806DTI
Pulsetest:*tp= 100ms,δ <2%tp=380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:
P=1.7xIF(AV)+ 0.087IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
RECOVERY CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH806DTI 23 456 78 9 10
P(W)
Fig.1:
Conduction losses versus averagecurrent.
100 (A)FM
Fig.2:
Forward voltage drop versus forward
current.
1E-3 1E-2 1E-1 1E+0
Z/Rth(j-c) th(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration. (ns)rr 50 100 150 200 250 300 350 400 450 500
Fig.5:
Reverse recovery time versus dIF/dt
(typical values). 50 100 150 200 250 300 350 400 450 500 (A)RM
Fig.4:
Peak reverse recovery current versus
dIF/dt (typical values). (nC)rr
140 100 200 300 400 500
Fig.6:
Reverse charges versus dIF/dt (typical
values).
STTH806DTI 50 75 100 125
Fig.8: Relative variationof dynamic parameters
versus junction temperature(reference:Tj= 125°C). 50 100 150 200 250 300 350 400 450 500(V)FP
Fig.9:
Transient peak forward voltage versus
dIF/dt (typical values).
200 100 200 300 400 500(ns)fr
Fig. 10:
Forward recovery time versus dIF/dt
(typical values). 50 100 150 200 250 300 350 400 450 500
Fig.7: Softness factor versus dIF/dt (typical
values).
STTH806DTI Cooling method:C Recommended torque value:0.8 N.m. Maximum torque value:1 N.m. Epoxy meets UL94,V0
Information furnishedisbelievedtobeaccurateandreliable.However,STMicroelectronics assumesno responsibility fortheconsequencesof
useofsuch informationnorfor anyinfringementofpatentsorother rightsofthird parties which mayresultfromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publication supersedesandreplacesall information previously supplied. STMicroelectronics productsare notau-
thorizedforuseas critical componentsinlife support devices orsystems withoutexpress written approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics.
All other namesarethe propertyof their respective owners. 2003 STMicroelectronics-All rights reserved.
STMicroelectronics GROUPOF COMPANIES
Australia- Belgium- Brazil- Canada- China- Czech Republic- Finland- France- Germany-
Hong Kong- India- Israel- Italy- Japan- Malaysia- Malta- Morocco- Singapore- Spain-
Sweden- Switzerland- United Kingdom- United States

PACKAGE MECHANICAL DATA

TO-220AC
:
www.ic-phoenix.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED