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STTH5R06BSTN/a6avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5R06B-TR |STTH5R06BTRSTN/a94avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5R06DSTN/a1850avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5R06FPST,STN/a10000avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER


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STTH5R06B-STTH5R06B-TR-STTH5R06D-STTH5R06FP
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5R06D/FP/B/G
October 2002-Ed:3B
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH5R06D/FP/B/G, whichis using ST
Turbo2 600V technology,is specially suitedas
boost diodein continuous mode power factor
corrections and hard switching conditions.
The device (available in TO-220AC,
TO-220FPAC,D2 PAK and DPAK)is also intended
for useasa free wheeling diodein power supplies
and other power switching applications.
DESCRIPTION
Ultrafast switching Low reverse recovery current Reduces switching losses Low thermal resistance
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH5R06D/FP/B/G evaluatethe maximum conduction lossesusethe following equation:
P=1.16xIF(AV)+ 0.128IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
DYNAMIC ELECTRICAL CHARACTERISTICS
0123 4567
P(W)
Fig.1:
Conduction losses versus average current.
012 3456
IFM(A)
Fig.2:
Forward voltage drop versus forward
current.
STTH5R06D/FP/B/G
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig. 3-1:
Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AC,
DPAK,D2 PAK). 200 400 600 800 1000
trr(ns)
Fig.5:
Reverse recovery time versus dIF/dt
(90% confidence). 200 400 600 800 1000
IRM(A)
Fig.4:
Peak reverse recovery current versus
dIF/dt (90% confidence).
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Zth(j-c)/Rth(j-c)
Fig. 3-2:
Relative variationof thermal impedance
junction to case versus pulse duration
(TO-220FPAC).
0.70 200 400 600 800 1000
S factor
Fig.7:
Softness factor versus dIF/dt (typical
values).
350 200 400 600 800 1000
Qrr(nC)
Fig.6:
Reverse recovery charges versus dIF/dt
(90% confidence).
STTH5R06D/FP/B/G
2.50 50 75 100 125
Fig. 8:
Relative variation of dynamic
parameters versus junction temperature. 100 200 300 400 500
VFP(V)
Fig.9:
Transient peak forward voltage versus
dIF/dt (90% confidence).
120 100 200 300 400 500
tfr(ns)
Fig. 10:
Forward recovery time versus dIF/dt
(90% confidence).
100 10 100 1000
C(pF)
Fig. 11:
Junction capacitance versus reverse
voltage applied (typical values).
02468 10 12 14 16 18 20
Rth(j-a)(°C/W)
Fig. 12:
Thermal resistance junctionto ambient
versus copper surface under tab (epoxy printed
circuit board FR4, Cu=35μm) (DPAK andD2 PAK).
STTH5R06D/FP/B/G
PACKAGE MECHANICAL DATA

TO-220FPAC
PACKAGE MECHANICAL DATA

TO-220AC

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