STTH5L06 ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSn Ultrafast switchingDO-201ADn Low reverse recovery currentSTTH5L06n Reduces s ..
STTH5L06B ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSn Ultrafast switchingn Low reverse recovery currentn Reduces switching & condu ..
STTH5L06B-TR ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH5L06D ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH5L06FP ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSn Ultrafast switchingn Low reverse recovery currentn Reduces switching & condu ..
STTH5R06B ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER®STTH5R06D/FP/B/GTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERKMAIN PRODUCT CHARACTERISTICSI 5AF(AV)V 60 ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
T6801 ,Single-channel driver 25 mA output with thermal monitoringFeatures Input Comparator with Schmitt-trigger Characteristic Input Clamping Current Capability o ..
STTH5L06
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5L06November 2001-Ed:1A
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH5L06, whichis usingST Turbo2 600V
technology,is specially suitedas boost diodein
discontinuousor critical mode power factor
corrections.
The deviceis also intendedfor useasa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Ultrafast switching Low reverse recovery current Reduces switching& conduction losses Low thermal resistance
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH5L06 evaluatethe maximum conduction losses usethe following equation:
P=0.89xIF(AV)+ 0.033IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
Note1:with recommendedpad layout(seeFig.12)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH5L06
P(W)
Fig.1: Conduction losses versus averagecurrent.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IFM(A)
Fig.2: Forward voltage drop versus forward
current.
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig.3: Relative variationof thermal impedance
junction ambient versus pulse duration
(DO-201AD, epoxy FR4, Lleads= 10mm).)
1000 10 2030 405060 7080 90 100
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt
(90% confidence).
10 20304050 607080 90 100
IRM(A)
Fig.4: Peak reverse recovery current versus dIF/dt
(90% confidence).
500 1020 3040 5060 7080 90 100
Qrr(nC)
Fig.6: Reverse recovery charges versus dIF/dt
(90% confidence).
STTH5L06
2.4 102030405060708090 100
S factor
Fig.7: Softness factor versus dIF/dt (typical
values).
1.25 50 75 100 125
Fig. 8: Relative variations of dynamic
parameters versus junction temperature.
20 40 60 80 100 120 140 160 180 200
VFP(V)
Fig.9: Transient peak forward voltage versus
dIF/dt (90% confidence).
200 20 40 60 80 100 120 140 160 180 200
tfr(ns)
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
100 10 100 1000
C(pF)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values). 1 234 5 6789 100
Rth(j-a) (°C/W)
Fig. 12: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35μm)
STTH5L06
PACKAGE MECHANICAL DATADO-201AD Epoxy meetsUL 94,V0 Lead bending and cutting: refertoST application note AN1471
Information furnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rights ofthird parties whichmay result fromitsuse.Nolicenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- Printedin Italy-All rights reserved.
STMicroelectronics GROUPOF COMPANIES
Australia- Brazil- Canada- China- Finland- France- Germany
Hong Kong- India- Israel-Italy- Japan- Malaysia -Malta- Morocco- Singapore
Spain- Sweden- Switzerland- United Kingdom- United States.
http://
:
www.ic-phoenix.com
.
