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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
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STTH512D-STTH512FP
Ultrafast recovery
November 2014 DocID12154 Rev 2 1/13
STTH512Ultrafast recovery - 1200 V diode
Datasheet - production data
Features Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current
operation High reverse voltage capability High junction temperature ECOPACK® 2 compliant component for DPAK
on demand Insulated package: TO-220FPAC Insulated voltage: 2000 VRMS sine
DescriptionThe high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Table 1. Device summary
Characteristics STTH5122/13 DocID12154 Rev 2
1 Characteristics o evaluate the conduction losses use the following equation:
P = 1.5 x IF(AV) + 0.08 IF2 (RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise stated)
Table 3. Thermal resistance
Symbol Parameter Value Unit
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2% Pulse test: tp = 380 µs, δ < 2%
STTH512 Characteristics
Table 5. Dynamic characteristics
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus forward
current
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
Characteristics STTH5124/13 DocID12154 Rev 2
Figure 5. Peak reverse recovery current versus F
/dt (typical values)
Figure 6. Reverse recovery time versus dIF
/dt
(typical values)
Figure 7. Reverse recovery charges versus F
/dt (typical values)
Figure 8. Softness factor versus dIF
/dt (typical
values)
Figure 9. Relative variations of dynamic
parameters versus junction temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
DocID12154 Rev 2 5/13
STTH512 Characteristics
Figure 13. Thermal resistance junction to ambient versus copper surface under tab
Figure 11. Forward recovery time versus F
/dt (typical values)
Figure 12. Junction capacitance versus reverse
voltage applied (typical values)
Package information STTH512 DocID12154 Rev 2
2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque values: 0.55 N·m for TO-220AC and TO-220FPAC Maximum torque value: 0.7 N·m for TO-220AC and TO-220FPAC
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Figure 14. TO-220AC dimension definitions
DocID12154 Rev 2 7/13
STTH512 Package information Table 6. TO-220AC dimension values
