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STTH506DSTN/a1520avaiTANDEM 600V HYPERFAST BOOST DIODE
STTH506DTISTN/a29avaiTANDEM 600V HYPERFAST BOOST DIODE


STTH506D ,TANDEM 600V HYPERFAST BOOST DIODEFEATURES AND BENEFITSn ESPECIALLY SUITED AS BOOST DIODE INCONTINUOUS MODE POWER FACTORDESCRIPTIONCO ..
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STTH506D-STTH506DTI
TANDEM 600V HYPERFAST BOOST DIODE
STTH506DTI
October 2003-Ed:2A
Tandem 600V HYPERFAST BOOST DIODE
The TURBOSWITCH “H”is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH“H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION
ESPECIALLY SUITEDAS BOOST DIODEIN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZINGOF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMONOR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN Package Capacitance: C=7pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values)
MAJOR PRODUCTS CHARACTERISTICS
STTH506DTI
THERMAL AND POWER DATA

Pulsetest:*tp= 100ms,δ <2%tp=380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:
P=1.7xIF(AV)+ 0.14IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH506DTI
P(W)

Fig.1: Conduction losses versus averagecurrent. (A)FM
100 2345 678
Fig.2:
Forward voltage drop versus forward
current.
Z/Rth(j-c) th(j-c)

1.E-03 1.E-02 1.E-01 1.E+00
Fig.3:
Relative variationof thermal impedance
junctionto case versus pulse duration. 50 100 150 200 250 300 350 400 450 500 (ns)rr
Fig.5:
Reverse recovery time versus dIF/dt
(typical values). 50 100 150 200 250 300 350 400 450 500 (A)RM
Fig.4:
Peak reverse recovery current versus
dIF/dt (typical values).
100 50 100 150 200 250 300 350 400 450 500 (nC)rr
Fig.6:
Reverse recovery charges versus dIF/dt
(typical values).
STTH506TDI
2.50 50 75 100 125
Fig.8:
Relative variationof dynamic parameters
versus junction temperature(reference:Tj= 125°C).(V)FP 50 100 150 200 250 300 350 400 450 500
Fig.9:
Transient peak forward voltage versus
dIF/dt (typical values). (ns)fr
200 100 200 300 400 500
Fig. 10:
Forward recovery time versus dIF/dt
(typical values).
0.60 50 100 150 200 250 300 350 400 450 500
Fig.7:
Reverse recovery softness factor versus
dIF/dt (typical values).
C(pF)

100 10 100 1000
Fig. 11:
Junction capacitance versus reverse
voltage applied (typical values).

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