STTH4R02 ,Ultrafast recovery diodeFeatures• Negligible switching losses• High junction temperature• Very low conduction losses• Low f ..
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH4R02-STTH4R02S-STTH4R02U
Ultrafast recovery diode
November 2014 DocID12360 Rev5 1/13
STTH4R02Ultrafast recovery diode
Datasheet − production data
Features Negligible switching losses High junction temperature Very low conduction losses Low forward and reverse recovery times ECOPACK® compliant component for DPAK
on demand
DescriptionThe STTH4R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DPAK, SMB and SMC, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection.
Table 1. Device summary
Characteristics STTH4R022/13 DocID12360 Rev5
1 Characteristics o evaluate the conduction losses use the following equation:
P = 0.67 x IF(AV) + 0.04 IF2 (RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Table 3. Thermal parameters
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2% Pulse test: tp = 380 µs, δ < 2%
STTH4R02 Characteristics
Table 5. Dynamic electrical characteristics
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus forward
current (typical values)
Figure 3. Forward voltage drop versus forward
current (maximum values)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration
Characteristics STTH4R024/13 DocID12360 Rev5
Figure 5. Relative variation of thermal
impedance, junction to ambient, versus pulse
duration (SMB)
Figure 6. Relative variation of thermal
impedance, junction to ambient, versus pulse
duration (SMC)
Figure 7. Junction capacitance versus reverse
applied voltage (typical values)
Figure 8. Reverse recovery charges versus F /dt (typical values)
Figure 9. Reverse recovery time versus dIF/dt
(typical values)
Figure 10. Peak reverse recovery current
versus dIF/dt (typical values)
DocID12360 Rev5 5/13
STTH4R02 Characteristics
Figure 11. Dynamic parameters versus junction
temperature
Figure 12. Thermal resistance, junction to
ambient, versus copper surface under tab
Figure 13. Thermal resistance, junction to
ambient, versus copper surface under tab
Figure 14. Thermal resistance, junction to
ambient, versus copper surface under tab
Package information STTH4R026/13 DocID12360 Rev5
2 Package informationNote: This package drawing may slightly differ from the physical package. However, all the
specified dimensions are guaranteed.
DocID12360 Rev5 7/13
STTH4R02 Package information
Figure 16. DPAK footprint dimensions (in mm)
Table 6. DPAK dimension values
