STTH4L06 ,TURBO 2 Ultrafast High Voltage Rectifierapplications. Table 1. Device summaryI 4 AF(AV)V 600 VRRMT 175 °CjV (typ) 0.9 VF t (typ) 40 ..
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T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH4L06
TURBO 2 Ultrafast High Voltage Rectifier
September 2009 Doc ID 16276 Rev 1 1/8
STTH4L06 urbo 2 ultrafast high voltage rectifier
Features Ultrafast switching Low forward voltage drop Low leakage current (platinum doping) High operating junction temperature
DescriptionThe STTH4L06, which uses ST T urbo 2 600 V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
Packaged in DO-201AD and DO-15, this device is
intended for use as a free wheeling diode in
power supplies and other power switching
applications.
Table 1. Device summary
Characteristics STTH4L06
2/8 Doc ID 16276 Rev 1
1 Characteristics
o evaluate the maximum conduction losses use the following equation:
P = 0.92 x IF(AV) + 0.045 x IF2 (RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Table 3. Thermal resistance
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2% Pulse test: tp = 380 µs, δ < 2%
Table 5. Dynamic electrical characteristics
STTH4L06 Characteristics
Doc ID 16276 Rev 1 3/8
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-201AD)
Figure 4. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-15)
Figure 5. Peak reverse recovery current
versus dIF /dt (typical values)
Figure 6. Reverse recovery time versus dIF /dt
(typical values)
Characteristics STTH4L06
4/8 Doc ID 16276 Rev 1
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
Figure 9. Transient peak forward voltage
versus dIF /dt (typical values)
Figure 10. Forward recovery time versus dIF /dt
(typical values)
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under lead (DO-201AD)
STTH4L06 Characteristics
Doc ID 16276 Rev 1 5/8
Figure 13. Thermal resistance versus lead length
(DO-201AD)
Figure 14. Thermal resistance versus lead length
(DO-15)
Package information STTH4L06
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2 Package information Epoxy meets UL94, V0 Band indicates cathode Bending method: see application note AN1471
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 6. DO-15 dimensions
Table 7. DO-201AD dimensions
