STTH3L06 ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI Reverse leakage V ..
STTH3L06 ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH3L06 ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSn Ultrafast switchingn Low reverse recovery currentDO-201ADn Reduces switching ..
STTH3L06S ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSDO-201ADDPAKSTTH3L06STTH3L06B■ Ultrafast switching■ Low forward voltage drop■ ..
STTH3L06U ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.Table 2: Order CodesPart Number MarkingSTTH3L06 STTH3L06STTH3L06RL STTH3L06STTH3L06B S ..
STTH3R02 ,Ultrafast recovery diodeSTTH3R02Ultrafast recovery diodeDatasheet - production dataTable 1. Device summaryA KI 3 AF(AV)V 20 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3L06
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH3L06October 2001-Ed:1A
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH3L06, whichis usingST Turbo2 600V
technology,is specially suitedas boost diodein
discontinuousor critical mode power factor
corrections.
The deviceis also intendedfor useasa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Ultrafast switching Low reverse recovery current Reduces switching& conduction losses Low thermal resistance
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH3L06 evaluatethe maximum conduction losses usethe following equation:
P=0.89xIF(AV)+ 0.055IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
Note1:With recommended padlayout(seeFig12)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH3L06
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
P(W)
Fig.1: Conduction losses versus averagecurrent.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IFM(A)
Fig.2: Forward voltage drop versus forward
current.
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)/Rth(j-a)
Fig.3: Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads= 10mm)
1000 5 10 15 20 25 30 35 40 45 50
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt
(90% confidence).
3.5 5 10 15 20 25 30 35 40 45 50
IRM(A)
Fig.4: Peak reverse recovery current versus
dIF/dt (90% confidence).
350 5 10 15 20 25 30 35 40 45 50
Qrr(nC)
Fig.6: Reverse recovery charges versus dIF/dt
(90% confidence).
STTH3L06
2.0 5 10 15 20 25 30 35 40 45 50
S factor
Fig.7: Softness factor versus dIF/dt (typical
values).
1.25 50 75 100 125
Fig. 8: Relative variations of dynamic
parameters versus junction temperature.
15.0 20 40 60 80 100 120 140 160 180 200
VFP(V)
Fig.9: Transient peak forward voltage versus
dIF/dt (90% confidence).
200 20 40 60 80 100 120 140 160 180 200
tfr(ns)
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
100 10 100 1000
C(pF)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values). 1 234 5 6789 100
Rth(j-a) (°C/W)
Fig. 12: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35μm)
STTH3L06
PACKAGE MECHANICAL DATADO-201AD Epoxy meetsUL 94,V0 Band indicated cathode Bending mehtod: Application note AN1471
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