STTH3006DPI ,TANDEM 600V HYPERFAST BOOST DIODEFEATURES AND BENEFITS1n ESPECIALLY SUITED AS BOOST DIODE INCONTINUOUS MODE POWER FACTORCORRECTORS A ..
STTH3006W ,Turbo 2 utrafast high voltage rectifierapplications, such as rectification and continuous STTH3006PImode PFC boost diode. Table 1. ..
STTH3010D ,Ultrafast recoveryapplications include industrial power supplies, motor control, and similar mission-critical systems ..
STTH3010PI ,Ultrafast recoveryapplications. The improved performance in low leakage current, and therefore thermal runaway guard ..
STTH3010W ,Ultrafast recoveryFeatures and benefitsSTTH3010D■ Ultrafast, soft recovery■ Very low conduction and switching lossesA ..
STTH3012D ,Ultrafast recoveryapplications. The improved performance in low leakage current, and therefore thermal runaway guard ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3006D-STTH3006DPI
TANDEM 600V HYPERFAST BOOST DIODE
STTH3006DPIOctober 2003- Ed:2A
Tandem 600V HYPERFAST BOOST DIODE
The TURBOSWITCH “H” is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH “H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION ESPECIALLY SUITED AS BOOST DIODEIN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK. STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN PACKAGE CAPACITANCE: C=16pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAJOR PRODUCTS CHARACTERISTICS
STTH3006DPIPulsetest:*tp= 100ms,δ <2%tp= 380 μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=1.7xIF(AV)+ 0.023IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH3006DPI
P(W)110 5 10 15 20 25 30 35 40
Fig.1: Conduction losses versus averagecurrent.
(A)FM200 2345 678
Fig. 2: Forward voltage drop versus forward
current.
Z/Rth(j-c) th(j-c)1.E-03 1.E-02 1.E-01 1.E+00
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration.
(ns)rr 50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt
(typical values).
(A)RM 50 100 150 200 250 300 350 400 450 500
Fig. 4: Peak reverse recovery current versus
dIF/dt (typical values).
(nC)rr300 50 100 150 200 250 300 350 400 450 500
Fig.6: Reverse recovery charges versus dIF/dt
(typical values).
STTH3006DPI3.00 50 75 100 125
Fig.8: Relative variationof dynamic parameters
versus junction temperature(reference:Tj= 125°C). 50 100 150 200 250 300 350 400 450 500
(V)FP
Fig.9: Transient peak forward voltage versus
dIF/dt (typical values).
800 100 200 300 400 500
(ns)fr
Fig. 10: Forward recovery time versus dIF/dt
(typical values).
0.40 50 100 150 200 250 300 350 400 450 500
Fig.7: Reverse recovery softness factor versus
dIF/dt (typical values).
C(pF)1000 10 100 1000
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
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