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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH3002C-STTH3002CG-STTH3002CG-TR-STTH3002CT-STTH3002CW
HIGH EFFICIENCY ULTRAFAST DIODE
STTH3002CFebruary 2004- Ed:1
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DCto DC
converters.
Packaged in TO-220AB,D2 PAK, TO-247 and2 PAK, this deviceis intended for usein low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION Suitedfor SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Low leakage current
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH3002CPulse test:*tp= 5ms,δ <2%tp= 380µs,δ <2% evaluate the maximum conduction losses use the following equation:= 0.69x IF(AV)+ 0.01IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICSWhen the diodes1 and2 are used simultaneously:Tj (diode1)= P(diode1)x Rth(j-c) (per diode)+ P(diode2)x Rth(c)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH3002C0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
(A)M
Fig.1: Peak current versus duty cycle (per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(A)FM
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration.
1000 50 100 150 200
C(pF)
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
250 100 1000
(nC)rr
Fig.5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
(A)FM
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
STTH3002C 100 1000
t(ns)rr
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode). 100 1000
I(A)RM
Fig.7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
1.4 50 75 100 125 150
Qrr;I [T]/Qrr;I [T=125°C]RMj RMj
Fig. 8: Dynamic parameters versus junction
temperature.
02468 10 12 14 16 18 20
(°C/W)th(j-a)
Fig. 9: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm)forD2 PAK.
STTH3002C
PACKAGE MECHANICAL DATA2 PAK
FOOTPRINT DIMENSIONS (in millimeters)
STTH3002C
PACKAGE MECHANICAL DATA2 PAK
PACKAGE MECHANICAL DATATO-247
