STTH2R06U ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITS■ Very low conduction losses■ Negligible switching losses DO-41STTH2R06■ Low f ..
STTH3002C ,HIGH EFFICIENCY ULTRAFAST DIODEFEATURES AND BENEFITSA2KKA1A1■ Suited for SMPS2TO-220AB I PAK■ Low lossesSTTH3002CT STTH3002CR■ Low ..
STTH3002CG ,HIGH EFFICIENCY ULTRAFAST DIODEapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH3002CG-TR ,HIGH EFFICIENCY ULTRAFAST DIODE®STTH3002CHIGH EFFICIENCY ULTRAFAST DIODEMAIN PRODUCT CHARACTERISTICSA1I 2 x 15AF(AV)KA2V 200 VRRMT ..
STTH3002CT ,HIGH EFFICIENCY ULTRAFAST DIODEELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI * Reverse leakage ..
STTH3002CW ,HIGH EFFICIENCY ULTRAFAST DIODEapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH2R06A-STTH2R06U
HIGH EFFICIENCY ULTRAFAST DIODE
1/8
Table 1: Main Product Characteristics
STTH2R06HIGH EFFICIENCY ULTRAFAST DIODE
Table 3: Absolute Ratings (limiting values)September 2004 REV. 1
FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
DESCRIPTIONThe STTH2R06 is using ST Turbo 2 600V planar
Pt doping technology. It is specially suited for
switching mode base drive & transistor circuits.
Packaged in axial, SMA and SMB, this device is
intended for use in high frequency inverters, free
wheeling and polarity protection.
Table 2: Order Codes
STTH2R06
Table 4: Thermal Resistance
Table 5: Static Electrical CharacteristicsPulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 1 x IF(AV) + 0.125 IF2 (RMS)
Table 6: Dynamic Characteristics
STTH2R063/8
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (SMA - SCU = 1cm2)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (SMB - SCU = 1cm2)
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration (DO-41)
Figure 6: Peak reverse recovery current versusF /dt (typical values)
STTH2R06
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
Figure 8: Reverse recovery charges versus dIF/
dt (typical values)
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dIF /dt (typical values)
Figure 11: Forward recovery time versus dIF/dt
(typical values)
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
STTH2R065/8
Figure 15: SMA Package Mechanical Data
Figure 13: Thermal resistance junction to
ambient versus copper surface under each
lead (epoxy FR4, eCU =35µm) (SMA / SMB)
Figure 14: Thermal resistance versus lead
length (DO-41)
Figure 16: SMA Foot Print Dimensions(in millimeters)
STTH2R06
Figure 17: SMB Package Mechanical Data
Figure 18: SMB Foot Print Dimensions(in millimeters)
