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STTH2L06A ,HIGH EFFICIENCY ULTRAFAST DIODESTTH2L06®HIGH EFFICIENCY ULTRAFAST DIODETable 1: Main Product CharacteristicsI2 AF(AV)A KV600 VRRMT ..
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T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH212S-STTH212U
High voltage ultrafast diode
Rev 1
June 2005 1/9
STTH212High voltage ultrafast diode
Main product characteristics
Features and benefits Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology
DescriptionThe STTH212, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications.
Housed in axial, SMB, and SMC packages, this
diode will reduce the losses in high switching
freqency operations.
Order codes
1 Electrical characteristics
STTH2122/9
1 Electrical characteristics To evaluate the conduction losses use the following equation: P = 1.26 x IF(AV) + 0.12 IF2 (RMS)
Table 1. Absolute Ratings (limiting values)
Table 2. Thermal parameters
Table 3. Static Electrical Characteristics
STTH212 1 Electrical characteristics
3/9
Table 4. Dynamic Electrical Characteristics
Figure 1. Conduction losses versus average
forward current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4, Leads= 10mm)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
SCU =1cm2)
1 Electrical characteristics
STTH2124/9
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
SCU =1cm2)
Figure 6. Reverse recovery current versus
dIF/dt (typical values)
Figure 7. Reverse recovery time versus dIF/dt
(typical values)
Figure 8. Reverse recovery charges versus
dIF/dt (typical values)
Figure 9. Softness factor versus dIF/dt
(typical values)
Figure 10. Relative variations of dynamic
parameters versus junction
temperature
STTH212 1 Electrical characteristics
5/9
Figure 11. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 12. Forward recovery time versus dIF/dt
(typical values)
Figure 13. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 14. Thermal resistance versus lead
length
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, eCU = 35µm)
Figure 16. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, ecu = 35 µm)
2 Package mechanical data
STTH2126/9
2 Package mechanical data
Table 5. SMB dimensions
Figure 17. SMB references to dimensions
Figure 18. SMB footprint dimensions
