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STTH1R06STN/a3300avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH1R06STMN/a20avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH1R06ASTMN/a3700avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH1R06ASTMicroeN/a20000avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH1R06RLSTN/a10000avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH1R06USTN/a50000avaiTURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER


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STTH1R06-STTH1R06A-STTH1R06RL-STTH1R06U
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
1/9
Table 1: Main Product Characteristics
STTH1R06

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values)

February 2005 REV. 3
FEATURES AND BENEFITS
Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching & conduction losses
DESCRIPTION

The STTH1R06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
power factor correction circuitry.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
Table 2: Order Codes
STTH1R06
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics

To evaluate the conduction losses use the following equation: P = 1.03 x I F(AV) + 0.27 IF2 (RMS)
Table 6: Dynamic Characteristics
Note 1: Rth(j-a) is measured with a copper area S = Scm
2 (see figure12).
STTH1R06
3/9
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (DO-41)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (SMA)
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration (SMB)
Figure 6: Peak reverse recovery current
versus dIF /dt (typical values)
STTH1R06
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
Figure 8: Reverse recovery charges versus
dIF/dt (typical values)
Figure 9: Reverse recovery softness factor
versus dIF /dt (typical values)
Figure 10: Relative variations of dynamic
parameters versus junction temperature
Figure 11: Transient peak forward voltage
versus dIF/dt (typical values)
Figure 12: Forward recovery time versus dIF/dt
(typical values)
STTH1R06
5/9
Figure 13: Junction capacitance versus
reverse voltage applied (typical values)
Figure 14: Thermal resistance junction to
ambient versus copper surface under each
lead (epoxy FR4, eCU=35µm) (DO-41, SMB)
Figure 15: Thermal resistance junction to
ambient versus copper surface under each
lead (epoxy FR4, eCU=35µm) (SMA)
STTH1R06
Figure 16: SMA Package Mechanical Data
Figure 17: SMA Foot Print Dimensions

(in millimeters)
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