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STTH1R02-STTH1R02A-STTH1R02U
Ultrafast recovery diode
March 2007 Rev 3 1/10
STTH1R02Ultrafast recovery diode
Main product characteristics
Features and benefits Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
DescriptionThe STTH1R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-41, DO-15, SMA, and SMB, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Order codes
Characteristics STTH1R022/10
1 Characteristics To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.08 IF2 (RMS)
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) On infinite heatsink with 10 mm lead length
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH1R02 Characteristics 3/10
Table 4. Dynamic characteristics
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (SMA)
Characteristics STTH1R024/10
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration (SMB)
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration (DO-41)
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration (DO-15)
Figure 8. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 9. Reverse recovery charges
versus dIF /dt (typical values)
Figure 10. Reverse recovery time versus dIF /dt
(typical values)
STTH1R02 Characteristics 5/10
Figure 11. Peak reverse recovery curent
versus dIF/dt (typical values)
Figure 12. Dynamic parameters versus
junction temperature
Figure 13. Thermal resistance, junction to
ambient, versus copper surface
under each lead - SMA (Epoxy FR4,
copper thickness = 35 µm)
Figure 14. Thermal resistance, junction to
ambient, versus copper surface
under each lead - SMB (Epoxy FR4,
copper thickness = 35 µm)
Figure 15. Thermal resistance, junction to
ambient, versus copper surface
under each lead - DO 15 (Epoxy
FR4, copper thickness = 35 µm)
Figure 16. Thermal resistance, junction to
ambient, versus copper surface
under each lead - DO-41 (Epoxy
FR4, copper thickness = 35 µm)
Ordering information scheme STTH1R026/10
Ordering information scheme
3 Package information Epoxy meets UL94, V0
Table 5. DO-41 dimensions
Table 6. DO-15 dimensions
